A potential difference of `2V` is applied between the opposite faces of a `Ge` crystal plate of area `1 cm^(2)` and thickness `0.5 mm`. If the concentration of electrons in `Ge` is `2xx10^(19)//m^(3)` and mobilities of electrons and holes are `0.36(m^(2))/(vol t-sec)` and `0.14 (m^(2))/(vol t-sec)` respectively, then the current flowing through the plate will beA. `0.25` AB. `0.45` AC. `0.56` AD. `0.64` A

A potential difference of `2V` is applied between the opposite faces o

1.	A potential difference of `2V` is applied between the opposite faces of a `Ge` crystal plate of area `1 cm^(2)` and thickness `0.5 mm`. If the concentration of electrons in `Ge` is `2xx10^(19)//m^(3)` and mobilities of electrons and holes are `0.36(m^(2))/(vol t-sec)` and `0.14 (m^(2))/(vol t-sec)` respectively, then the current flowing through the plate will beA. `0.25` AB. `0.45` AC. `0.56` AD. `0.64` A
Answer» Correct Answer - D

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