Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an n−type semiconductor, the density of electrons is 1019 m−3 and their mobility is 1.6 m2V−1s−1 then the resistivity of the semiconductor (since it is an n−type semiconductor contribution of holes is ignored) is close to:

Mobility of electrons in a semiconductor is defined as the ratio of th

1.	Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an n−type semiconductor, the density of electrons is 1019 m−3 and their mobility is 1.6 m2V−1s−1 then the resistivity of the semiconductor (since it is an n−type semiconductor contribution of holes is ignored) is close to:
Answer» Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an $n - type$ semiconductor, the density of electrons is $10^{19} m^{- 3}$ and their mobility is $1.6 m^{2} V^{- 1} s^{- 1}$ then the resistivity of the semiconductor (since it is an $n - type$ semiconductor contribution of holes is ignored) is close to:

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