Pure `Si` at `300 K` has equal electron `(n_(i))` concentrations of `1.5 xx 10^(16) m^(-3)`. Doping by indium increases `n_(h) = 4.5 xx 10^(22) m^(-3). N_(e)` in the doped `Si` isA. `5 xx 10^(9)`B. `7 xx 10^(9)`C. `9 xx 10^(9)`D. `8 xx 10^(9)`

Pure `Si` at `300 K` has equal electron `(n_(i))` concentrations of `1

1.	Pure `Si` at `300 K` has equal electron `(n_(i))` concentrations of `1.5 xx 10^(16) m^(-3)`. Doping by indium increases `n_(h) = 4.5 xx 10^(22) m^(-3). N_(e)` in the doped `Si` isA. `5 xx 10^(9)`B. `7 xx 10^(9)`C. `9 xx 10^(9)`D. `8 xx 10^(9)`
Answer» Correct Answer - A We know that ofr a doped semiconductor in thermal equilibrium, we have `n_(e)n_(h)=n_(i)^(2)` As per given data, `n_(i?) =1.5 xx 10^(16) m^(-3)` `n_(h) = 4.5 xx10^(22) m^(-3)` Thus `n_(e)=(n_(i)^(2))/(n_(h)) =((1.5 xx10^(16))^(2)m^(-6))/(4.5 xx10^(22)m^(-3))=5.0 xx10^(9) m^(-3)`.

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Pure `Si` at `300 K` has equal electron `(n_(i))` concentrations of `1.5 xx 10^(16) m^(-3)`. Doping by indium increases `n_(h) = 4.5 xx 10^(22) m^(-3). N_(e)` in the doped `Si` isA. `5 xx 10^(9)`B. `7 xx 10^(9)`C. `9 xx 10^(9)`D. `8 xx 10^(9)`

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