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A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10 [ε = 3.9; ε = 8.85 x 10 F/cm, = 1.6 x 10 ]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ .

Answer» VT(new) = VT(odd) + = 6.903 x 10-8 ∴ ∴ fB = - 8.6 x 1011 The threshold voltage is always negative for p-channel and hence implant is of p-type.


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