A `p-n` photodiode is made of a material with a band gap of `2.0 eV`. The minimum frequency of the radiation that can be absorbed by the material is nearlyA. `10xx10^(14) Hz`B. `5xx10^(14) Hz`C. `1xx10^(14) Hz`D. `10xx10^(14) Hz`

A `p-n` photodiode is made of a material with a band gap of `2.0 eV`.

1.	A `p-n` photodiode is made of a material with a band gap of `2.0 eV`. The minimum frequency of the radiation that can be absorbed by the material is nearlyA. `10xx10^(14) Hz`B. `5xx10^(14) Hz`C. `1xx10^(14) Hz`D. `10xx10^(14) Hz`
Answer» Correct Answer - B `p-n` photodiode is a semiconductor diode that produces a significant current when illuminated. It is reversed biased but is operated below the breakdown voltage. Energy of radiation=band gap energy That is `hv=2.0 eV` or `v=(2.0xx1.6xx10^(-19))/(6.6xx10^(-34))~~5xx10^(14)Hz`

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A `p-n` photodiode is made of a material with a band gap of `2.0 eV`. The minimum frequency of the radiation that can be absorbed by the material is nearlyA. `10xx10^(14) Hz`B. `5xx10^(14) Hz`C. `1xx10^(14) Hz`D. `10xx10^(14) Hz`

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