A piece of pure semiconductor of silicn of size `1cm xx 1 cm xx 1 mm` is having `5 xx 10^(28)` number of atoms per cubic metre. It is doped simultaneously with `5 xx 10^(22)` atoms per `m^(3)` of aresenic adn `5 xx 10^(20)` per `m^(3)` atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is `1.5 xx 10^(16) m^(-3)`. Mobility of electron is `3800 cm^(2) V^(-)S^(-1)`The conductivity of doped semiconductor (in `Sm^(-1))` isA. `2xx10^(3)`B. `3xx10^(3)`C. `4xx10^(3)`D. `1xx10^(3)`

A piece of pure semiconductor of silicn of size `1cm xx 1 cm xx 1 mm`

1.	A piece of pure semiconductor of silicn of size `1cm xx 1 cm xx 1 mm` is having `5 xx 10^(28)` number of atoms per cubic metre. It is doped simultaneously with `5 xx 10^(22)` atoms per `m^(3)` of aresenic adn `5 xx 10^(20)` per `m^(3)` atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is `1.5 xx 10^(16) m^(-3)`. Mobility of electron is `3800 cm^(2) V^(-)S^(-1)`The conductivity of doped semiconductor (in `Sm^(-1))` isA. `2xx10^(3)`B. `3xx10^(3)`C. `4xx10^(3)`D. `1xx10^(3)`
Answer» Correct Answer - B The conductivity of doped semiconductor is `sigma=n_(e) e mu_(e)` `=(4.95xx10^(22))xx(1.6xx10^(-19))xx(3800xx10^(-4))` `=3xx10^(3) Sm^(-1)`