InterviewSolution
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InterviewSolution
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A potential difference of `2V` is applied between the opposite faces of a `Ge` crystal plate of area `1 cm^(2)` and thickness `0.5 mm`. If the concentration of electrons in `Ge` is `2xx10^(19)//m^(3)` and mobilities of electrons and holes are `0.36(m^(2))/(vol t-sec)` and `0.14 (m^(2))/(vol t-sec)` respectively, then the current flowing through the plate will beA. `0.25 A`B. `0.45 A`C. `0.56 A`D. `0.64 A` |
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Answer» Correct Answer - D `sigma=en_(e)mu_(e)` `=2xx10^(19)xx1.6xx10^(-19)(0.36+0.14)=1.6(Omega-m)^(-1)` `R=sigmal/A=l/(sigmaA)=(0.5xx10^(-3))/(1.6xx10^(-4))=25/8 Omega` `:. i=V/R=2/(25//8)=16/25 A =0.64 A` |
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