A pure silicon crystal of length `l(0.1m)` and area `A(10^(-4) m^(2))` has the mobility of electron `(mu_(e))` and holes `(mu_(h))` as `0.135 m^(2)//Vs` and `0.48 m^(2)//Vs`, respectively, If the voltage applied across it is `2V` and the intrinsic charge concen-tration it is `2V` and the intrinsic charge concen-tration is `n_(i) = 1.5 xx 10^(6) m^(-3)`, then the total current flowing through the crystal is.A. `8.78 xx 10^(17) A`B. `6.25 xx 10^(-17) A`C. `7.89 xx 10^(-17) A`D. `2.456 xx 10^(-17) A`

A pure silicon crystal of length `l(0.1m)` and area `A(10^(-4) m^(2))`

1.	A pure silicon crystal of length `l(0.1m)` and area `A(10^(-4) m^(2))` has the mobility of electron `(mu_(e))` and holes `(mu_(h))` as `0.135 m^(2)//Vs` and `0.48 m^(2)//Vs`, respectively, If the voltage applied across it is `2V` and the intrinsic charge concen-tration it is `2V` and the intrinsic charge concen-tration is `n_(i) = 1.5 xx 10^(6) m^(-3)`, then the total current flowing through the crystal is.A. `8.78 xx 10^(17) A`B. `6.25 xx 10^(-17) A`C. `7.89 xx 10^(-17) A`D. `2.456 xx 10^(-17) A`
Answer» Correct Answer - A `I=e(n_(e)mu_(e)+n_(h)mu_(h))(AV)/(l)` Putting the values, we get `I = 8.78 xx 10^(-17) A`.

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