A `Si` and a `Ge` diode has identical physical dimensions. The band gap in `Si` is larger than that in `Ge`. An indentical reverse bias is applied across the diodes.A. The reverse current in `Ge` is larger than that in `Si`B. The reverse current in `Si` is larger than that in `Ge`C. The reverse current is identical in the two diodesD. The relative magnitude of the reverse currents cannot be determined from the given data only.

A `Si` and a `Ge` diode has identical physical dimensions. The band ga

1.	A `Si` and a `Ge` diode has identical physical dimensions. The band gap in `Si` is larger than that in `Ge`. An indentical reverse bias is applied across the diodes.A. The reverse current in `Ge` is larger than that in `Si`B. The reverse current in `Si` is larger than that in `Ge`C. The reverse current is identical in the two diodesD. The relative magnitude of the reverse currents cannot be determined from the given data only.
Answer» Correct Answer - C

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