A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.

A silicon (PN) junction at a temperature of 20°C has a reverse satura

1.	A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.
Answer» By increasing of temperature by 10°C, Io become double so by increasing temperature 20°C, Io become 4 time than initial value... and it is 40 PA.