An ideal n−channel MOSFET has the following parameters,threshold voltage VT=0.65V and oxide thickness is 0.4nm.It is found that the MOSFET operating in saturationregion with VDS=6V. Then the power dissipation in theMOSFET with VGS=4 V isμnCaxWL=1.5×10−3A/V2,

An ideal n−channel MOSFET has the following parameters,threshold vol

1.	An ideal n−channel MOSFET has the following parameters,threshold voltage VT=0.65V and oxide thickness is 0.4nm.It is found that the MOSFET operating in saturationregion with VDS=6V. Then the power dissipation in theMOSFET with VGS=4 V isμnCaxWL=1.5×10−3A/V2,
Answer» $A n i d e a l n - c h a n n e l M O S F E T h a s t h e f o l l o w i n g p a r a m e t e r s, t h r e s h o l d v o l t a g e V_{T} = 0.65 V a n d o x i d e t h i c k n e s s i s 0.4 n m . I t i s f o u n d t h a t t h e M O S F E T o p e r a t i n g i n s a t u r a t i o n r e g i o n w i t h V_{D S} = 6 V . T h e n t h e p o w e r d i s s i p a t i o n i n t h e M O S F E T w i t h V_{G S} = 4 V i s μ_{n} C_{a x} \frac{W}{L} = 1.5 \times 10^{- 3} A / V^{2},$

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An ideal n−channel MOSFET has the following parameters,threshold voltage VT=0.65V and oxide thickness is 0.4nm.It is found that the MOSFET operating in saturationregion with VDS=6V. Then the power dissipation in theMOSFET with VGS=4 V isμnCaxWL=1.5×10−3A/V2,

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