Assertion (A) : `Si` and `GaAs` are preferred materials for solar cells Reason (R ) : Energy gap of `Si` is `1.1 eV` and that of `GaAs` is `1.53 eV` which gives maximum irradiance where as other materials like `CdS` or `CdSe (E_(g) = 2.4 eV)` and `PbS (E_(g) = 0.4 eV)` given minimum irradiance.

Assertion (A) : `Si` and `GaAs` are preferred materials for solar cell

1.	Assertion (A) : `Si` and `GaAs` are preferred materials for solar cells Reason (R ) : Energy gap of `Si` is `1.1 eV` and that of `GaAs` is `1.53 eV` which gives maximum irradiance where as other materials like `CdS` or `CdSe (E_(g) = 2.4 eV)` and `PbS (E_(g) = 0.4 eV)` given minimum irradiance.
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Assertion (A) : `Si` and `GaAs` are preferred materials for solar cells Reason (R ) : Energy gap of `Si` is `1.1 eV` and that of `GaAs` is `1.53 eV` which gives maximum irradiance where as other materials like `CdS` or `CdSe (E_(g) = 2.4 eV)` and `PbS (E_(g) = 0.4 eV)` given minimum irradiance.

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