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Considering `a.p-n` junction as a capacitor, forward with `p` and `n` material acting as thin metal electrodes and depletion layer width acting as seperation between them. Basing on this assume that a `n-p-n` transistor is working as an amplifier in `CE` configuration. If `C_(1)` and `C_(2)` are base-emiter and collector emitter junction capacitances, then :A. `C_(1) gt C_(2)`B. `C_(1) lt C_(2)`C. `C_(1) = C_(2)`D. `C_(1) = C_(2) = 0`

Answer» Correct Answer - A


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