Explain briefly the processes that occur in p-n junction region to cre

1.	Explain briefly the processes that occur in p-n junction region to create a potensial barrier.
Answer» • P-Type material consists of silicon and a trivalent impurity. The number of protons and electrons are equal and there is no net charge • N-Type material consists of silicon and a Pentavalent impurity. The number of protons and electrons are equal and there is no net charge. Barrier Potential. • The electric field formed in the depletion region acts as a barrier. • External energy must be applied to get the electrons to move across the barrier of the electric field. • The potential difference required to move the electrons through the electric field is called the barrier potential. • Barrier potential of a PN junction depends on the type of semiconductor material, amount of doping and temperature. • A PN junction forms when a piece of intrinsic silicon is doped half Ntype and half P-Type.

Explain briefly the processes that occur in p-n junction region to create a potensial barrier.

Answer»

• P-Type material consists of silicon and a trivalent impurity. The number of protons and electrons are equal and there is no net charge

• N-Type material consists of silicon and a Pentavalent impurity. The number of protons and electrons are equal and there is no net charge.

Barrier Potential.

• The electric field formed in the depletion region acts as a barrier.

• External energy must be applied to get the electrons to move across the barrier of the electric field.

• The potential difference required to move the electrons through the electric field is called the barrier potential.

• Barrier potential of a PN junction depends on the type of semiconductor material, amount of doping and temperature.

• A PN junction forms when a piece of intrinsic silicon is doped half Ntype and half P-Type.

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