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In a forward biased p-n junction diode, the potential barrier in the depletion region will be of the form |
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Answer» The correct option is (d). Explanation: We know that in a forward biased p-n junction diode, the repulsion of holes and electrons takes place which decreases width of potential barrier by striking the combination of holes and electrons. We also know that the options (a) and (b) show the potential barrier. In reverse bias, whereas the options (c) and (d) show the potential barrier in forward bias, Moreover, the width of depletion layer in option (d) is less than shown in option (c). Thus, the potential barrier in the depletion region will be of the form as shown in option (d), |
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