In an intrinsic semiconductor we doped boronwith density 1.5 x 1018 atoms/cm3 andposphorus with density 1018 atoms/cm3 thernwhich type of semiconductor forms and whatis the charge carrier density(1) P-type, 0.5 x 1018 cm-3(2) N-type, 0.5 × 1018 cm-3(3) P-type, 2.5 x 1018 cm-3(4) N-type, 2.8 x 1018 cm

In an intrinsic semiconductor we doped boronwith density 1.5 x 1018 at

1.	In an intrinsic semiconductor we doped boronwith density 1.5 x 1018 atoms/cm3 andposphorus with density 1018 atoms/cm3 thernwhich type of semiconductor forms and whatis the charge carrier density(1) P-type, 0.5 x 1018 cm-3(2) N-type, 0.5 × 1018 cm-3(3) P-type, 2.5 x 1018 cm-3(4) N-type, 2.8 x 1018 cm
Answer» In an intrinsic semiconductor we doped boronwith density 1.5 x 1018 atoms/cm3 andposphorus with density 1018 atoms/cm3 thernwhich type of semiconductor forms and whatis the charge carrier density(1) P-type, 0.5 x 1018 cm-3(2) N-type, 0.5 × 1018 cm-3(3) P-type, 2.5 x 1018 cm-3(4) N-type, 2.8 x 1018 cm

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