In Fig. `V_(0)` is the potential barrier across a `p-n` junction, when no battery is connected across the junction : .A. `1` and `3` both correspond is forward bias of junctionB. `3` corresponds to forward bias of junction and `1` corresponds to reverse bias junctionC. `1` corresponds to forward bias and `3` corresponds to reverse bias junctionD. `3` and `1` both correspond to reverse bias and `3` corresponds to revers bias of junction

In Fig. `V_(0)` is the potential barrier across a `p-n` junction, when

1.	In Fig. `V_(0)` is the potential barrier across a `p-n` junction, when no battery is connected across the junction : .A. `1` and `3` both correspond is forward bias of junctionB. `3` corresponds to forward bias of junction and `1` corresponds to reverse bias junctionC. `1` corresponds to forward bias and `3` corresponds to reverse bias junctionD. `3` and `1` both correspond to reverse bias and `3` corresponds to revers bias of junction
Answer» Correct Answer - B When `p-n` junction is forward biased, it opposes the potential barrier junction, when `p-n` junction is reverse biased, it supports the potential barrier junction resulting increases in potential barrier across the junction.

Discussion

No Comment Found

Related InterviewSolutions

In the circuit below, `A` and `B` represents two inputs and `C` represents the output, the circuit represents. .A. `NOR` gateB. `AND` gatesC. `NAND`gateD. `OR`gate
The Boolean expression of the output `Y` of the inputs `A` and `B` for the circuit shown in the fig. .
When `p-n` junction diode is forward biased thenA. the depletion region is reduced and barrier height is increasedB. the depletion region is widened and barrier height is reducedC. both the depletion region and barrier height are reducedD. both the depletion region and barrier height are increased
There is a sudden increase in current in zener diode isA. Due to rupture of bondsB. Resistance of deplection layer becomes lessC. Due to high dopingD. Due to less doping
In a `p-n` junction photo cell, the value of the photo electromotive force produced by monochromatic light is proportional toA. The barrier voltage at the `p-n` junctionB. The intensity of the light falling on the cellC. The frequency of the light falling on the cellD. The voltage applied at the `p-n` junction
The following one represents logic addition isA. `1 + 1=2`B. `1 + 1 = 10`C. `1 + 1 = 1`D. `1 + 1 = 11`
For a logic `0101` the waveform is.A. B. C. D.
The process of converting alternating current into direct current is known asA. modulationB. amplificationC. detectionD. rectification
On increasing reverse voltage in a `p-n` junction diode the value of reverse current willA. gradually increasesB. first remains constant and then suddenly increaseC. remains constantD. gradually decrease
In a `p-n` junction diode, the currect `I` can expressed as `I=I_(0) exp((eV)/(2k_(B)T)-1)` where `I_(0)` is called the reverse saturation current, `V` is the voltage across the diode and is positive for forward bias and negative for reverse bias, and `I` is the current through the diode, `K_(B)` is the Boltzmann constant `(8.6 xx 10^(-5) eV//K)` and `T` is the absolute temperature. If for a given diode `I_(o) = 5 xx 10^(-12) A` and `T = 300 K`, then (a) What will be the forward current at a formward voltage of `0.6V` ? (b) What will be the increase in the current if the voltage across the diode is increased to `0.7 V` ? ( c) What is the dynamic resistance ? (d) What will be current if reverse bias voltage changes from `1 V` to `2 V` ?

Discussion

No Comment Found

Related InterviewSolutions

Reply to Comment