Saved Bookmarks
| 1. |
Pure Si at 300 K has equal electron and hole concentration of 1.5×1016/m3. Doping by indium increases nh to 4.5×1022/m3. What is ne in doped silicon? |
|
Answer» Pure Si at 300 K has equal electron and hole concentration of 1.5×1016/m3. Doping by indium increases nh to 4.5×1022/m3. What is ne in doped silicon? |
|