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Pure Si at 300 K has equal electron and hole concentration of 1.5×1016/m3. Doping by indium increases nh to 4.5×1022/m3. What is ne in doped silicon?

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Pure Si at 300 K has equal electron and hole concentration of 1.5×1016/m3. Doping by indium increases nh to 4.5×1022/m3. What is ne in doped silicon?



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