Pure Si at 300 K has equal electron (ne) and hole (nh) concentrations of 1.5×1016 m−3. Doping by indium increases nh to 4.5×1022 m−3. Calculate ne in the doped Si.

Pure Si at 300 K has equal electron (ne) and hole (nh) concentrations

1.	Pure Si at 300 K has equal electron (ne) and hole (nh) concentrations of 1.5×1016 m−3. Doping by indium increases nh to 4.5×1022 m−3. Calculate ne in the doped Si.
Answer» Pure Si at $300 K$ has equal electron $(n_{e})$ and hole $(n_{h})$ concentrations of $1.5 \times 10^{16} m^{- 3}$ . Doping by indium increases $n_{h}$ to $4.5 \times 10^{22} m^{- 3}$ . Calculate $n_{e}$ in the doped Si.

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Pure Si at 300 K has equal electron (ne) and hole (nh) concentrations of 1.5×1016 m−3. Doping by indium increases nh to 4.5×1022 m−3. Calculate ne in the doped Si.

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