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Silicon is doped with boron to a concentration of 4 x 10 atoms/cm. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 10/cm and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon

Answer» Use EF - Ev = Since it is doped with acceptor impurity, Fermi level will shift down.


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