InterviewSolution
Saved Bookmarks
| 1. |
The dominant mechanismfor motion of charge carries in forward and reverse biased silicon p-n jucntion are (a) diffusion in forward biased, drift in reverse bias (b) drift in forward biased, drift in reverse biased (c) diffusion in both forward and reverse bias (d) drift in both forward and reverse bias |
|
Answer» Correct option (a) diffusion in forward biased, drift in reverse bias Explanation: In p-n junction, the diffusion of majority carriers takes place when juncton is forward biased and drifting of minority carrier takes place across teh junction when reverse biased. |
|