The dominant mechanisms for motion of charge carriers in forward and r – InterviewSolution

InterviewSolution

1.	The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction areA. drift in forward bias and diffusion in reverse biasB. diffusion in forward bias and drift in reverse biasC. diffusion in both forward and the reverse biasD. drift in both forward and reverse bias
Answer» Correct Answer - B Under the effect of electric field applied, the drift of charge carriers is from lower concentration to higher concentration and diffusion of charge carriers is from higher concentration to lower concentration. In forward biasing diffusion is more than drift and in reverse biasing, drift is more than diffusion.

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