InterviewSolution
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InterviewSolution
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The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction areA. Drift in forwards bias, diffusion in reverse biaseB. Diffusion in forward bias, drift in reverse biasC. Diffusion in both forwards and reverse biaseD. Drift in both forward and reverse biase |
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Answer» Correct Answer - B In forward biasing the diffusion current increases and drift current remains constant so not current is due to the diffusion. In reverse biasing diffusion becomes more difficult so net current (very small) is due to the drift. |
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