The width of forbidden gap in silicon crystal is `1.1 eV`. When the crystal is converted into a `N`-type semiconductor the distance of Fermi level from conduction band isA. Greater than `0.55 eV`B. Equal to `0.55 eV`C. Lesser than `0.55 eV`D. Equal to `1.1 eV`

The width of forbidden gap in silicon crystal is `1.1 eV`. When the cr

1.	The width of forbidden gap in silicon crystal is `1.1 eV`. When the crystal is converted into a `N`-type semiconductor the distance of Fermi level from conduction band isA. Greater than `0.55 eV`B. Equal to `0.55 eV`C. Lesser than `0.55 eV`D. Equal to `1.1 eV`
Answer» Correct Answer - C

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The width of forbidden gap in silicon crystal is `1.1 eV`. When the crystal is converted into a `N`-type semiconductor the distance of Fermi level from conduction band isA. Greater than `0.55 eV`B. Equal to `0.55 eV`C. Lesser than `0.55 eV`D. Equal to `1.1 eV`

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