Related InterviewSolutions

• The small ozone layer on top of the stratosphere is crucial for human survival. Why?
• Why is photodiode used in reverse bias?
• The width of depletion region in a p–n junction diode is 500 nm and an intense electric field of 6×105 V/m is also found to exist. The height of potential barrier is (1) 0.30 V (2) 0.40 V (3) 3 V(4) 4 V
• How is forward biasing different from reverse biasing in a p-n junction diode?
• Intensity of light emitted by LED depends on (1) Forward bias voltage (2) Forward current (3) Forward resistance (4) Nature of semiconductor crystal 
• Colour of the light emitted by LED depends on (1) Forward bias voltage (2) Reverse bias voltage(3) Nature of semiconductor crystal(4) Forward resistance 
• An intrinsic semiconductor is at a temperature of 27°C. The probability of an electron jumping from valence band to conduction band (1) does not vary as temperature rises to 40°C (2) decreases linearly with rise in temperature (3) increases exponentially as the energy gap increases (4) decreases exponentially as the energy gap increases
• Most of currently available semiconductor are elemental semiconductors Si or Ge and compound inorganic semiconductors. From 1990 on wards devices using organic semiconductors and semiconducting polymers have been developed. These are futuristic technology in gradients. The (a) in organic (b) organic and (c) organic polymer semiconductors are: (1) (a) GaAs (b) CdSe (c) anthracene (2) (a) GaAs (b) anthracene (c) polyanline(3) (a) anthracene (b) GaAs (c) polyanline (4) (a) CdSe (b) polyanline (a) anthracene 
• Are the mobilities of electron and hole equal in semiconductor.
• A “Hole” in a semiconductor is produced when an electron breaks away from a covalent bond in a semiconductors. Which of the following statements regarding a hole is incorrect? (1) A hole has same magnitude of charge as on an electron (2) In an external electric field a hole moves in a direction opposite to that of free electron (3) The energy of a hole is less as compared to that of an electron(4) In same external applied electric field the drift speed acquired by a hole is less than the drift speed acquired by a free electron