1.

When a p-type semiconductor is brought into a close contact with n-type semiconductor, we get a p-n junction with a barrier potential `0.4V` and the width of depletion region is `4.0 xx 10^(-7)m`. this p-n junction is forwaed biased with a battery of voltage `3V` adn negligible internal resistance, in series with a resistance of resistance R, ideal milliammeter and key K as shown in Fig. The resistance of resistor R isA. `150 Omega`B. `300 Omega`C. `130 Omega`D. `180 Omega`

Answer» Correct Answer - C
Pot. Diff. across `R=3-0.4=2.6 V`
Resistance, `R=("pot. diff.")/("current")=2.6/(20xx10^(-3))=130 Omega`


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