When a p-type semiconductor is brought into a close contact with n-type semiconductor, we get a p-n junction with a barrier potential `0.4V` and the width of depletion region is `4.0 xx 10^(-7)m`. this p-n junction is forwaed biased with a battery of voltage `3V` adn negligible internal resistance, in series with a resistance of resistance R, ideal milliammeter and key K as shown in Fig. Wattage of diode isA. 0.060 WB. 0.052 WC. 0.008 WD. 0.048 W

When a p-type semiconductor is brought into a close contact with n-typ

1.	When a p-type semiconductor is brought into a close contact with n-type semiconductor, we get a p-n junction with a barrier potential `0.4V` and the width of depletion region is `4.0 xx 10^(-7)m`. this p-n junction is forwaed biased with a battery of voltage `3V` adn negligible internal resistance, in series with a resistance of resistance R, ideal milliammeter and key K as shown in Fig. Wattage of diode isA. 0.060 WB. 0.052 WC. 0.008 WD. 0.048 W
Answer» Correct Answer - C Wattage of diode = voltage drop across diode xx current `=0.4xx20xx10^(-3)=0.008 W`