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101.	What will happen if gate voltage applied is positive to pinch off voltage?(a) Device burns(b) More current flows(c) Nothing happens(d) Current remains the sameI had been asked this question in homework.This interesting question is from The Pinch off Voltage Vp topic in division Field-Effect Transistors of Electronic Devices & Circuits
Answer» Right CHOICE is (a) Device burns To elaborate: When the voltage applied ACROSS the gate terminal becomes more positive, all of the current will start flowing from drain to gate terminal. This results in breaking of insulator LAYER, resulting in device destruction.

102.	What is the main advantage of FET which makes it more useful in industrial applications?(a) Voltage controlled operation(b) Less cost(c) Small size(d) Semiconductor deviceI had been asked this question by my school principal while I was bunking the class.My question is taken from The Junction Field-Effect Transistor topic in section Field-Effect Transistors of Electronic Devices & Circuits
Answer» The correct answer is (c) Small size Explanation: Because of its small size, the IC CHIPS can be made even smaller which REDUCES the wear and tear. The process technology used with process technology constant a which is the RATIO of Width and LENGTH, the FET is made more advantageous.

103.	FET is a voltage controlled device.(a) True(b) FalseThe question was asked by my school teacher while I was bunking the class.I would like to ask this question from The Junction Field-Effect Transistor in section Field-Effect Transistors of Electronic Devices & Circuits
Answer» Right answer is (a) True Explanation: Field Effect Transistors are voltage controlled devices, by APPLYING some voltage between the GATE and SOURCE, the DRAIN current can be controlled. In order to control the operation of FET the gate to drain voltage is VARIED to operate the FET in different regions of operation.

104.	What will be the value of trans conductance if two Identical FETs are connected in parallel?(a) Doubles(b) Reduces to half(c) 0(d) InfiniteI got this question in class test.Origin of the question is The JFET Volt-Ampere Characteristics in portion Field-Effect Transistors of Electronic Devices & Circuits
Answer» RIGHT choice is (a) Doubles Easy explanation: GM’=IDS/Vgs at VDS=0V, if two FET are IDENTICAL then, gm1=gm2=gm But gm’=gm1+gm2 Therefore gm’=gm+gm=2gm.

105.	An amplifier is designed using fixed bias configuration, what is its input impedance (source Resistor is un bypassed)?(a) RD+rd(b) RG(c) RD \|\| rd(d) 0This question was addressed to me by my school teacher while I was bunking the class.This intriguing question comes from The Common Source Amplifier topic in division Field-Effect Transistors of Electronic Devices & Circuits
Answer» CORRECT answer is (b) RG Easy explanation: From the AC small signal model, the input IMPEDANCE of FET is open CIRCUIT. Gate resistance RGis in parallel with open circuit resulting in Zin=∞\|\|RG=RG.

106.	The Shockley equation is __________________(a) ID = (1 – Vgs/Vp)^2(b) ID = IDSS (1 – Vgs/Vp)^2(c) ID = IDSS (1 – Vgs/Vp)^1(d) ID = IDSS (1 + Vgs/Vp)^2I got this question during an interview.This intriguing question originated from The Junction Field-Effect Transistor in division Field-Effect Transistors of Electronic Devices & Circuits
Answer» RIGHT ANSWER is (b) ID = IDSS (1 – Vgs/Vp)^2 Easy EXPLANATION: By using the diode equation Shockley derived the equation between the drain current and VOLTAGE Vgs.

107.	Input signal of common drain amplifier is applied to the gate through ________(a) input resistor(b) coupling capacitor(c) output capacitor(d) transformerThe question was posed to me during an online exam.Origin of the question is A Generalized FET Amplifier topic in division Field-Effect Transistors of Electronic Devices & Circuits
Answer» The correct choice is (B) coupling capacitor Easy explanation: A common-drain AMPLIFIER is ALSO called a source-follower. Self-biasing is used in this particular circuit. The INPUT signal is applied to the gate through a coupling capacitor, and the output signal is coupled to the load resistor through the other capacitor.

108.	D-MOSFET in case of common source amplifier can operate with gate to source voltage zero at ______(a) Peak positive point(b) Peak negative point(c) Q point(d) OriginI got this question in an online quiz.Asked question is from A Generalized FET Amplifier topic in portion Field-Effect Transistors of Electronic Devices & Circuits
Answer» Right option is (c) Q point Explanation: Q-point” NEEDS to be FOUND for the correct biasing of the JFET amplifier CIRCUIT with single amplifier configurations of Common-source, Common-drain or Source-follower and the Common-gate available for most FET DEVICES.

109.	Ideal maximum voltage for common drain amplifier is_________(a) 0(b) 1(c) 0.5(d) 2The question was posed to me in examination.This intriguing question originated from A Generalized FET Amplifier topic in chapter Field-Effect Transistors of Electronic Devices & Circuits
Answer» Correct answer is (b) 1 Easy explanation: SIMILAR to the transistor EMITTER follower, the source follower configuration itself provides a high level of buffering and a high input impedance. The ACTUAL input resistance of the FET itself is very high as it is a field EFFECT device. This means that the source follower circuit is able to provide excellent performance as a buffer. The voltage gain is unity, although current gain is high. The input and output signals are in PHASE.

110.	Which of the following equation brings the relation between gate to source voltage and drain current in Self Bias?(a) Vgs=VDD(b) Vgs=-ID Rs(c) Vgs=0(d) Vgs=1+ID RsThe question was posed to me during an interview.I'm obligated to ask this question of Biasing the FET topic in chapter Field-Effect Transistors of Electronic Devices & Circuits
Answer» The CORRECT CHOICE is (B) Vgs=-ID RS For EXPLANATION: VRs=ID Rs ButVRs+Vgs=0 Vgs=-ID Rs.

111.	If a FET has a pinch off voltage =-1V and ID=1mA, If Vgs=0V, What is the value of IDSS?(a) 1A(b) 1mA(c) 0A(d) 100mAThe question was asked during an online interview.This is a very interesting question from The Pinch off Voltage Vp in portion Field-Effect Transistors of Electronic Devices & Circuits
Answer» Right choice is (B) 1mA To EXPLAIN I WOULD SAY: ID=IDSS (1-Vgs/Vp)^2 Vgs=0V => : ID=IDSS=1mA.

112.	Which of the following is the necessary condition to design an amplifier?(a) Vce ≤ ^1⁄10of RC(b) \|Vce\| ≤ ^1⁄10of RC(c) \|Vce\| ≤ ^1⁄1000of RC(d) \|Vce\| ≤ ^1⁄100of RCThe question was asked during an interview for a job.My question is based upon The Junction Field-Effect Transistor in division Field-Effect Transistors of Electronic Devices & Circuits
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