47 + Interview Questions in Mos Field Effect Transistors (Mosfets) in Electronic Devices & Circuits Page 1 InterviewSolution

1.	The _____________ of a MOSFET is affected by the voltage which is applied to the back contact.(a) Threshold Voltage(b) Output Voltage(c) Both threshold and output voltage(d) Neither of the threshold nor the output voltageI got this question during an interview.This intriguing question comes from The Body Effect topic in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Correct answer is (a) Threshold Voltage Explanation: The voltage difference between the source and the bulk, VBS changes the width of the DEPLETION LAYER and therefore also the voltage across the oxide due to the CHANGE of the CHARGE in the depletion region. This RESULTS in a difference in threshold voltage which equals the difference in charge in the depletion region divided by the oxide capacitance.

Discussion

2.	Find V1 and V2(a) 2V and -4V(b) -2V and 4V(c) 2V and 4V(d) -2V and -4VThe question was posed to me during an online exam.My enquiry is from MOSFETs Circuits at DC in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Right option is (c) 2V and 4V Easiest EXPLANATION: ID = 1 = ^1⁄2 * 1 * (VGS – 2)^2 => VGS = 3.41v. V3 = 3.41v.

Discussion

3.	The transistor in the circuit shown below has kn = 0.4 mA/V^2, Vt = 0.5 V and λ = 0. Operation at the edge of saturation is obtained when(a) (W/L)RD = 0.5 kΩ(b) (W/L)RD = 1.0 kΩ(c) (W/L)RD = 1.5 kΩ(d) (W/L)RD = 2.0 kΩThe question was posed to me during an interview.My question is from MOSFETs Circuits at DC topic in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Correct CHOICE is (c) (W/L)RD = 1.5 kΩ Explanation: Use the standard FORMULA for EDGE SATURATION.

Discussion

4.	For a p channel MOSFET which of the following is not true?(a) The source and drain are a p type semiconductor(b) The induced channel is p type region which is induced by applying a positive potential to the gate(c) The substrate is a n type semiconductor(d) None of the mentionedThis question was posed to me during an internship interview.I want to ask this question from MOSFETs Device Strucuture and Physical Operation in portion MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Right CHOICE is (b) The induced CHANNEL is P type REGION which is induced by applying a positive potential to the GATE Explanation: The induced channel is p type region which is induced by applying a negative potential to the gate.

Discussion

5.	Which of the following is true for the saturation region?(a) VDG ≤ \|Vtp\|(b) VSD ≤\| VOV\|(c) VDG < \|Vtp\|(d) VSD
Answer» CORRECT choice is (a) VDG ≤ \|Vtp\| Easy EXPLANATION: It is a CHARACTERISTIC for the saturation REGION.

Discussion

6.	A breakdown effect that occurs in modern devices at low voltages (of around 20 V) is(a) Weak avalanche(b) Strong avalanche(c) Weak storm(d) Punch-throughThe question was posed to me during an online interview.Query is from The Body Effect in section MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» The correct option is (d) Punch-through For explanation I would say: Punch-through occurs in DEVICES with relatively short channels when the drain voltage is increased to the point that the depletion REGION surrounding the drain region EXTENDS through the channel to the source. The drain current then increases rapidly. NORMALLY, punch-through does not result in PERMANENT damage to the device.

Discussion

7.	Bias point is also referred by the name(a) DC Operating Point(b) Quiescent Point(c) None of the mentioned(d) All of the mentionedI got this question in an interview for internship.I'm obligated to ask this question of MOSFET in Amplfier Design in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Right choice is (d) All of the mentioned The BEST I can explain: BIAS point is called dc operating point as the MOSFET FUNCTIONS best at this point. Also SINCE at the bias point no signal COMPONENT is present it is called quiescent point (he reason why it is represented by the symbol ‘Q’)

Discussion

8.	The MOSFET in the following circuit is in which configuration?(a) Common Source (CS)(b) Common Gate (CG)(c) Common Drain (CD)(d) None of the mentionedI got this question at a job interview.This key question is from Basic MOSFET Amplifier Configurations in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» CORRECT option is (c) COMMON DRAIN (CD) EXPLANATION: It is the circuit for Common drain configuration.

Discussion

9.	Determine the conditions in which the MOSFET is operating in the triode region.i. VGD > Vt (Threshold voltage)ii. VDS > VOViii. ID ∝ (VOV – 0.5VDS)VDS(a) i, ii, and iii are correct(b) i and iii are correct(c) i and ii are correct(d) ii and iii are correctThis question was addressed to me in an interview for internship.My enquiry is from MOSFETs Current-Voltage Characterisitcs topic in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» The correct option is (b) i and iii are correct To explain I would say: Only the POINTS I and iii are correct and II is false.

Discussion

10.	An NMOS transistor has Vt0 = 0.8 V, 2 φf = 0.7 V, and γ = 0.4 V1/2. Find Vt when VSB = 3 V.(a) 0.12 V(b) 1.23 V(c) 2.34 V(d) 3.45 VThe question was posed to me during an internship interview.My doubt is from The Body Effect topic in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Right answer is (b) 1.23 V For explanation: Vt = Vt0 + k[√(VSB + 2φf) – √2φf]. USE this expression to obtain the desired RESULT.

Discussion

11.	The variation of the threshold voltage with the applied bulk-to-source voltage is typically observed by plotting the _________________ as a function of the source-to-drain voltage.(a) drain current(b) square root of the drain current(c) square of the drain current(d) natural logarithm of the drain currentThis question was posed to me during an online exam.My question comes from The Body Effect in portion MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Right option is (B) square ROOT of the drain CURRENT Best explanation: The change in threshold current is directly PROPORTIONAL to the square root of the drain current. For further ASSISTANCE check the mathematical expression for the same.

Discussion

12.	The SI units of the body effect parameter is(a) Volt(b) Volt X Volt(c) √Volt(d) It has no unitsThis question was addressed to me in homework.My question is based upon The Body Effect topic in section MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Correct answer is (C) √Volt The explanation: Vt = Vt0 + k[√(Vsb + 2φf) – √2φf]. In this expression k is the BODY effect parameter hence its units can be DETERMINED.

Discussion

13.	When the voltage across the drain and the source (VDS) is increased from a small amount (assuming that the gate voltage, VG with respect to the source is higher than the threshold voltage, Vt), then the width of the induced channel in NMOS (assume that VDS is always small when compared to the Vov)(a) Will remain as was before(b) Will become non uniform and will take a tapered shape with deepest width at the drain(c) Will become non uniform and will take a tapered shape with deepest width at the source(d) Will remain uniform but the width of the channel will increaseThis question was posed to me in an online quiz.I would like to ask this question from MOSFETs Device Strucuture and Physical Operation topic in portion MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Correct answer is (c) Will BECOME NON uniform and will take a tapered shape with deepest WIDTH at the source Explanation: The voltage across the source will be VOV and the voltage will decrease linearly to VOV – VDS as we reach the drain END. The width of the induced channel is proportional to the voltage.

Discussion

14.	Find the open-Circuit voltage gain.(a) 1 V/V(b) 2 V/V(c) 3 V/V(d) 4 V/VThe question was asked during an online interview.My question comes from Discrete-Circuit MOS Amplifiers topic in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» The CORRECT CHOICE is (a) 1 V/V For EXPLANATION I WOULD say: (Q.7-Q.8):

Discussion

15.	In which of the following configuration is the input resistance (Ri) not equal to zero ideally?(a) Common source configuration(b) Common source configuration with source resistance(c) Common gate configuration(d) Source follower configurationI had been asked this question in a national level competition.I'd like to ask this question from Basic MOSFET Amplifier Configurations in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» The CORRECT CHOICE is (c) Common GATE configuration The best explanation: Refer to the CIRCUIT for the common gate configuration

Discussion

16.	For NMOS transistor which of the following is not true?(a) The substrate is of p-type semiconductor(b) Inversion layer or induced channel is of n type(c) Threshold voltage is negative(d) None of the mentionedThis question was addressed to me in an international level competition.This interesting question is from MOSFETs Device Strucuture and Physical Operation in section MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» CORRECT answer is (c) THRESHOLD voltage is negative Best EXPLANATION: The threshold voltage is POSITIVE for NMOS.

Discussion

17.	An n-channel MOSFET operating with VOV=0.5V exhibits a linear resistance = 1 kΩ when VDS is very small. What is the value of the device transconductance parameter kn?(a) 2 mA/V^2(b) 20 mA/V^2(c) 0.2 A/V^2(d) 2 A/V^2This question was addressed to me in examination.This intriguing question comes from MOSFETs Current-Voltage Characterisitcs in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» RIGHT ANSWER is (a) 2 mA/V^2 For EXPLANATION: Use the STANDARD mathematical expression to determine the value of kn.

Discussion

18.	The current iD(a) Depends linearly onVOV in the saturation region(b) Depends on the square ofVOV in the saturation region(c) Depends inversely on VOV in the triode region(d) None of the mentionedI had been asked this question during an interview.Question is taken from MOSFETs Current-Voltage Characterisitcs topic in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» The correct choice is (b) Depends on the square ofVOV in the SATURATION region The EXPLANATION is: USE the standard mathematical expressions for I0 in DIFFERENT regions.

Discussion

19.	The threshold voltageis(a) Increases on increasing temperature(b) May increase or decrease on increasing temperature depending upon other factors(c) Temperature independent(d) Decreases on increasing temperatureI had been asked this question in exam.The doubt is from The Body Effect topic in portion MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Right option is (d) DECREASES on increasing temperature Easy explanation: The threshold voltage depends only on the temperature and it decreases by ROUGHLY 2 MV for every degree Celsius INCREASE in the temperature.

Discussion

20.	An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOV and a drain current ID. If is VOV is doubled, and we must maintain operation at the edge of saturation, what value of drain current results?(a) 0.25ID(b) 0.5ID(c) 2ID(d) 4IDI had been asked this question during an online interview.This question is from MOSFETs Current-Voltage Characterisitcs in section MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» RIGHT option is (c) 2ID Easy explanation: I0 is DIRECTLY PROPORTIONAL to VOS.

Discussion

21.	For amplifier biased to operate with an overdrive voltage of 0.5V, and disregarding the distortion caused by the MOSFET’s square-law characteristic, what is the largest amplitude of a sine-wave voltage signal that can be applied at the input while the transistor remains in saturation?(a) 1.61 V(b) 1.5 V(c) 0.11 V(d) 3.11 VThe question was posed to me in homework.My enquiry is from MOSFET in Amplfier Design topic in section MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» CORRECT ANSWER is (b) 1.5 V Explanation: Use the STANDARD mathematical FORMULA to OBTAIN the result.

Discussion

22.	Which of the following is true for the voltage gain (AV) for the common source configuration (represented by A1) and the common gate configuration (represented by A2)?(a) A1 = A2(b) \|A1\| = \|A2\| and A1 ≠ A2(c) \|A1\| > \|A2\|(d) \|A1\| < \|A2\|This question was addressed to me in quiz.This intriguing question originated from Basic MOSFET Amplifier Configurations topic in portion MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Correct answer is (B) \|A1\| = \|A2\| and A1 ≠ A2 For explanation: A1 = -GM(RL\|\|RD) and A1 = gm(RL\|\|RD) Reference figure for common SOURCE configuration Reference figure for common gate configuration

Discussion

23.	In the saturation region of the MOSFET the saturation current is(a) Independent of the voltage difference between the source and the drain(b) Depends directly on the voltage difference between the source and the drain(c) Depends directly on the overdriving voltage(d) Depends directly on the voltage supplied to the gate terminalThe question was posed to me during an interview.I would like to ask this question from MOSFETs Current-Voltage Characterisitcs in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» The correct option is (a) INDEPENDENT of the voltage difference between the source and the DRAIN Best EXPLANATION: Saturation CURRENT does not depends on the voltage difference between the source and the drain in the saturation region of a MOSFET.

Discussion

24.	At channel pinch off(a) The width of the induced channel becomes non linear(b) The width of the induced channel becomes very large (resulting in very large resistance and very low, practically zero, current)(c) width becomes 1/e times the maximum possible width(d) The width of the induced channel becomes zero and the current saturatesI got this question in an interview.The question is from MOSFETs Device Strucuture and Physical Operation topic in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» The correct choice is (d) The WIDTH of the induced CHANNEL becomes zero and the CURRENT saturates To explain I would say: It is a characteristics of a channel pinch off.

Discussion

25.	The SI Units of the Process transconductance Parameter (k’) is(a) V^2/A(b) A/V^2(c) V/A(d) A/VThis question was addressed to me in an international level competition.This key question is from MOSFETs Device Strucuture and Physical Operation topic in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Correct ANSWER is (B) A/V^2 To ELABORATE: K’ =μn Cox whereμn is electronic mobility (m^2/Vs) and Cox is oxide capacitance is (F/m^2).

Discussion

26.	The saturation current of the MOSFET is the value of the current when(a) The voltage between the drain and drain becomes equal to the overdrive voltage(b) The voltage between the drain and drain becomes equal to the threshold voltage(c) The voltage between the drain and drain becomes equal to the voltage applied to the gate(d) The voltage between the drain and drain becomes equal to difference the overdrive voltage and the threshold voltageThis question was addressed to me in an interview for job.This interesting question is from MOSFETs Device Strucuture and Physical Operation topic in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» The CORRECT ANSWER is (a) The voltage between the drain and drain becomes equal to the OVERDRIVE voltage Explanation: By DEFINITION of the MOSFET saturation current.

Discussion

27.	At ______________ the drain current is no longer related to the Vgs by square law relationship.(a) When the temperature is high (around 700 Celsius)(b) When temperature is very low (around -50 Celsius)(c) Velocity saturation(d) None of the mentionedI had been asked this question in an online quiz.I'd like to ask this question from The Body Effect in section MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Correct CHOICE is (c) Velocity saturation To EXPLAIN: At velocity saturation the CURRENT depends linearly on the VGS.

Discussion

28.	Which of the following has AVO independent of the circuit elements?(a) Common source configuration(b) Common gate configuration(c) Source follower configuration(d) None of the mentionedI had been asked this question at a job interview.My doubt stems from Basic MOSFET Amplifier Configurations in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Correct option is (C) SOURCE FOLLOWER configuration For explanation: AVO = 1 source follower.

Discussion

29.	The MOSFET transconductance parameter is the product of(a) Process transconductance and inverse of aspect ratio(b) Inverse of Process transconductance and aspect ratio(c) Inverse of Process transconductance and inverse of aspect ratio(d) Process transconductance and aspect ratioI have been asked this question in exam.My question is from MOSFETs Device Strucuture and Physical Operation in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» CORRECT choice is (d) Process transconductance and aspect ratio To EXPLAIN: This statement only SATISFIES the mathematical expression.

Discussion

30.	Process transconductance parameter is directly proportional to(a) Electron mobility only(b) (Electron mobility)^-1 only(c) Oxide capacitance only(d) Product of oxide capacitance and electron mobilityI got this question in an internship interview.I'd like to ask this question from MOSFETs Device Strucuture and Physical Operation topic in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» RIGHT ANSWER is (d) PRODUCT of oxide CAPACITANCE and electron MOBILITY Explanation: It is the product of the electronic mobility with the oxide capacitance (F/m^2).

Discussion

31.	If a MOSFET is to be used in the making of an amplifier then it must work in(a) Cut-off region(b) Triode region(c) Saturation region(d) Both cut-off and triode region can be usedThis question was addressed to me by my school teacher while I was bunking the class.This interesting question is from MOSFETs Current-Voltage Characterisitcs in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» The correct ANSWER is (C) SATURATION REGION Explanation: Only in the saturation region a MOSFET can OPERATE as an amplifier.

Discussion

32.	In MOSFETs a breakdown may occur at around 30 V. This is due to(a) Velocity saturation(b) Breakdown of the gate diode(c) Sudden decrease in the depletion region(d) Fall of the threshold voltage due to impuritiesThe question was posed to me in an interview for job.Enquiry is from The Body Effect in portion MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Correct answer is (b) Breakdown of the gate diode To EXPLAIN: The breakdown of the oxide at the gate may OCCUR when the voltage is around 30 V. This may ALSO permanently DAMAGE the DEVICE.

Discussion

33.	Which of the below issues may not be experienced when using MOSFETs?(a) Weak avalanche(b) Velocity saturation(c) Punch-through(d) All of the mentionedI have been asked this question in a job interview.My question is based upon The Body Effect in portion MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» CORRECT option is (d) All of the mentioned Explanation: All of the mentioned are some of the common ISSUES that ONE MAY FACE while dealing with MOSFETs.

Discussion

34.	Determine the conditions in which the MOSFET is operating in the saturation regioni. VGD > Vt (Threshold voltage)ii. VDS > VOViii. ID ∝ (VOV)^2(a) i, ii, and iii are correct(b) i and iii are correct(c) i and ii are correct(d) ii and iii are correctThis question was addressed to me in an online interview.My query is from MOSFETs Current-Voltage Characterisitcs topic in portion MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» The CORRECT answer is (d) II and iii are correct Explanation: i is false and ii and iii are TRUE.

Discussion

35.	Aspect ratio of the MOSFET has the units of(a) No units(b) m(c) m^2(d) m^-1The question was asked during an online interview.This intriguing question comes from MOSFETs Device Strucuture and Physical Operation in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» CORRECT ANSWER is (a) No units Easy explanation: It is the RATIO of the induced CHANNEL width (w) to the induced channel length (l).

Discussion

36.	Which is true for the value of Avo for common source (Represented by A1) and common source with a source resistance (represented by A2).(a) A1 = A2(b) A1 > 2(c) A1 < A2(d) \|A1\| < \|A2\|The question was posed to me in an internship interview.My question is taken from Basic MOSFET Amplifier Configurations in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» CORRECT choice is (C) A1 < A2 Easy explanation: A1 = -gmRD and A2 = -gmRD/1+gmRS Reference circuit for Common source configuration Reference circuit for common source with source RESISTANCE RS

Discussion

37.	In which of the following configuration does a MOSFET works as an amplifier?(a) Common Source (CS)(b) Common Gate (CG)(c) Common drain(CD)(d) All of the mentionedThe question was posed to me during an online interview.I'd like to ask this question from Basic MOSFET Amplifier Configurations topic in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Right OPTION is (d) All of the mentioned Easy explanation: There are three BASIC configurations for connecting the MOSFET as an amplifier. Each of these configurations is obtained by connecting one of the three MOSFET terminals to GROUND, thus creating a two-port network with the GROUNDED terminal being common to the input and OUTPUT ports.

Discussion

38.	For the input signal of 1.5V what is the value of the gain value obtained?(a) -12.24 V/V(b) -12.44 V/V(c) -12.64 V/V(d) -12.84 V/VI got this question by my school principal while I was bunking the class.I would like to ask this question from MOSFET in Amplfier Design topic in section MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Right OPTION is (c) -12.64 V/V To explain I would say: The amplitude of the OUTPUT voltage signal that RESULTS is APPROXIMATELY equal to Voq – VOB = 2 – 0.61 = 1.39v. The gain implied by amplitude is Gain = -1.39/0.11 = -12.64 V/V.

Discussion

39.	The value of the voltage gain (Av) for the common source with source resistance (represented by A1) and common gate configuration (represented by A2) are related to each other by(a) A1 > A2(b) \|A1\| > \|A2\|(c) A1 < A2(d) A1 > A2 and \|A1\| > \|A2\|This question was posed to me by my college professor while I was bunking the class.My enquiry is from Basic MOSFET Amplifier Configurations topic in portion MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Correct OPTION is (C) A1 < A2 Explanation: A1 = – gm(RL\|\|RD)/ 1 + gmRS and A2 = gm(RL\|\|RD) Reference figure for common SOURCE with source resistance CONFIGURATION Reference figure for common gate configuration

Discussion

40.	For MOSFET is to be used as a switch then it must operate in(a) Cut-off region(b) Triode region(c) Saturation region(d) Both cut-off and triode region can be usedI got this question in a job interview.Enquiry is from MOSFETs Current-Voltage Characterisitcs topic in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Correct ANSWER is (d) Both cut-off and TRIODE region can be used The EXPLANATION: In both regions it can perform the task of a switch.

Discussion

41.	With the potential difference between the source and the drain kept small (VDS is small), the MOSFET behaves as a resistance whose value varies __________ with the overdrive voltage(a) Linearly(b) Inversely(c) Exponentially(d) LogarithmicallyI had been asked this question in an online interview.Question is taken from MOSFETs Device Strucuture and Physical Operation in section MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» RIGHT OPTION is (b) Inversely Best explanation: For small VDS, resistance r is GIVEN by R = 1 / ((μn Cox)(w/l)(VOV)).

Discussion

42.	Which of the following is the fastest switching device?(a) JEFT(b) Triode(c) MOSFET(d) BJTI got this question during an interview.The above asked question is from MOSFET in Amplfier Design in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» The correct option is (C) MOSFET The explanation is: MOSFET is the FASTEST switching device among the GIVEN four OPTIONS.

Discussion

43.	The MOSFET in the following circuit is in which configuration?[/expand](a) Common Source (CS)(b) Common Gate (CG)(c) Common Drain (CD)(d) None of the mentionedThis question was addressed to me in a national level competition.My question is taken from Basic MOSFET Amplifier Configurations in portion MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» CORRECT choice is (a) Common Source (CS) To explain I would say: It is the CIRCUIT for Common source CONFIGURATION.

Discussion

44.	For the PMOS transistor in the circuit shown kn= 8 µA/V^2, W/L = 25,\|Vtp\| = 1V and I = 100μA. For what value of R is VSD = VSG?(a) 0 Ω(b) 12.45 kΩ(c) 25.9 kΩ(d) 38.35 kΩI got this question in exam.I'd like to ask this question from MOSFETs Circuits at DC in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» CORRECT answer is (a) 0 Ω Easiest EXPLANATION: VSG will be equal to VSD only when the resistance SHOWN is zero or in other words there should not be any resistance.

Discussion

45.	As the voltage on the drain is increased, a value is reached at which the pn junction between the drain region and substrate suffers avalanche breakdown known as(a) Weak avalanche(b) Strong avalanche(c) Weak storm(d) Punch-throughI have been asked this question in unit test.This interesting question is from The Body Effect topic in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» Correct choice is (a) Weak avalanche The explanation: As the VOLTAGE on the drain is INCREASED, a value is REACHED at which the pn junction between the drain region and substrate suffers avalanche BREAKDOWN. This breakdown usually OCCURS at voltages of 20 V to 150 V and results in a somewhat rapid increase in current (known as a weak avalanche).

Discussion

46.	The overdrive voltage at which each device must be operating is(a) NMOS = 0.83V and PMOS = 0.48V(b) NMOS = 0.48V and PMOS = 0.83V(c) NMOS = 0.24V and PMOS = 0.41V(d) NMOS = 0.41V and PMOS = 0.24VI have been asked this question in semester exam.My question is taken from MOSFET in Small Signal Operation topic in section MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» The correct option is (B) NMOS = 0.48V and PMOS = 0.83V Explanation: NMOS CASE PMOS case

Discussion

47.	If a gain of at least 5 V/V is needed, what value of gm is required?(a) 0.1 mA/V(b) 0.2 mA/V(c) 0.4 mA/V(d) 0.8 mA/VThis question was addressed to me in an interview.This intriguing question comes from MOSFET in Small Signal Operation topic in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
Answer» CORRECT choice is (a) 0.1 mA/V The best EXPLANATION: gmRd = 5 or GM= 5/50 mA/V.

Discussion

Explore topic-wise InterviewSolutions in .

Find V1 and V2(a) 2V and -4V(b) -2V and 4V(c) 2V and 4V(d) -2V and -4VThe question was posed to me during an online exam.My enquiry is from MOSFETs Circuits at DC in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits

Which of the following is true for the saturation region?(a) VDG ≤ |Vtp|(b) VSD ≤| VOV|(c) VDG < |Vtp|(d) VSD

The SI units of the body effect parameter is(a) Volt(b) Volt X Volt(c) √Volt(d) It has no unitsThis question was addressed to me in homework.My question is based upon The Body Effect topic in section MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits

Find the open-Circuit voltage gain.(a) 1 V/V(b) 2 V/V(c) 3 V/V(d) 4 V/VThe question was asked during an online interview.My question comes from Discrete-Circuit MOS Amplifiers topic in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits

Aspect ratio of the MOSFET has the units of(a) No units(b) m(c) m^2(d) m^-1The question was asked during an online interview.This intriguing question comes from MOSFETs Device Strucuture and Physical Operation in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits

Which of the following is the fastest switching device?(a) JEFT(b) Triode(c) MOSFET(d) BJTI got this question during an interview.The above asked question is from MOSFET in Amplfier Design in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits