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This section includes 7 InterviewSolutions, each offering curated multiple-choice questions to sharpen your Current Affairs knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The energy band gap of Si isA. 0.70 eVB. 1.1 eVC. between 0.70 eV to 1.1 eVD. 5 eV |
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Answer» Correct Answer - B |
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| 2. |
In an insulator, the forbidden energy gap between the valence band and conduction band is of the order ofA. 1 MeVB. 0.1 MeVC. 1 eVD. 5 eV |
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Answer» Correct Answer - D |
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| 3. |
What is the current in the circuit shown below? A. zeroB. `10^(-2)A`C. `1 A`D. `0.10 A` |
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Answer» Correct Answer - A |
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| 4. |
A sample of n-type siliconA. Contains an excess of free electrons therefore it is negatively chargedB. Contains an excess of free electrons and it is electrically neutralC. Predominantly contains trivalent impuritiesD. Contains only pentavalent element |
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Answer» Correct Answer - B |
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| 5. |
In the circuit given below, the value of the current is A. zeroB. `10^(-2)A`C. `10^(2)A`D. `10^(-3)A` |
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Answer» Correct Answer - B |
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| 6. |
The current through an ideal `PN`-junction shown in the following circuit diagram will be A. zeroB. 1 mAC. 10 mAD. 30 mA |
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Answer» Correct Answer - A |
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| 7. |
A piece of semiconductors is connected in sereis in an electric circuit. On increasing the temperautre, the current in the circuit willA. decreaseB. remain unchargedC. increaseD. stop flowing |
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Answer» Correct Answer - C |
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| 8. |
Hole isA. an anti-particle of electronB. a vacancy created when an electron leaves a covalent bondC. absence of free electronsD. an artificially created particle |
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Answer» Correct Answer - B |
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| 9. |
Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are `0.36 m^(2)//Vs` and `0.17 m^(2)//Vs`. The electron and hole densities are each equal to `2.5 xx 10^(19) m^(-3)`. The electrical conductivity of germanium is.A. `0.47 S//m`B. `5.18 S//m`C. `2.12 S//m`D. `1.09 S//m` |
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Answer» Correct Answer - C |
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| 10. |
In figure , assuming the diodes to be ideal , A. `D_(1)` is forward biased, `D_(2)` is reverse biased and hence current flows from A to BB. `D_(2)` is forward biased, `D_(1)` is reverse biased and hence no current flows from B to A and vice-versaC. `D_(1)` and `D_(2)` are both forward biased and hence current flows from A to BD. `D_(1)` and `D_(2)` are both reverse biased and hence no current flows from A to B and vice-versa |
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Answer» Correct Answer - B |
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| 11. |
The valance of the impurity atom that is to be added to germanium crystal so as to make it a `N`-type semiconductor, isA. 6B. 5C. 4D. 3 |
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Answer» Correct Answer - B |
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| 12. |
The conductivity of a semiconductor increases with increase in temperature becauseA. number density of free current carriers increasesB. relaxation time increasesC. both number density of carriers and relaxation time decreases but effect of decrease in relaxation time is much less than increase in number density.D. number density of current carriers increases, relaxation time decreases but effect of decrease in relaxation time is much less than increase in number density |
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Answer» Correct Answer - D |
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| 13. |
The symbol represents :- |
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Answer» Correct Answer - A |
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| 14. |
The symbol given in figure represents A. n-p-n transistorB. p-n-p transistorC. forward biased p-n junction diodeD. reverse biased n-p junction diode |
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Answer» Correct Answer - A |
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| 15. |
Choose the corrector relation between the transistor parameters `alpha` and `beta`.A. `beta=(alpha+1)/(alpha)`B. `beta=(alpha-1)/(alpha)`C. `beta=(alpha)/(1- alpha)`D. `beta=(alpha)/(1+ alpha)` |
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Answer» Correct Answer - C |
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| 16. |
In a transistor, the current amplification factor `alpha` is 0.9. The transistor is connected in common base configuration. The change in collector current when base current changes by 4 mA isA. 4 mAB. 12 mAC. 24 mAD. 36 mA |
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Answer» Correct Answer - D |
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| 17. |
The Boolen expression for the circuit given in figure is A. `Y=A+bar(B)`B. `Y=bar(A+B)`C. `Y=(barA+B)`D. `Y=A+B` |
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Answer» Correct Answer - C |
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| 18. |
In the case of constant `alpha` and `beta` of a transistorA. `alpha=beta`B. `beta lt 1, alpha gt 1`C. `alpha beta = 1`D. `beta gt 1, alpha lt 1` |
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Answer» Correct Answer - D |
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| 19. |
The Boolen expression for the circuit given in figure is A. `Y=barA.B+C`B. `Y=barA.(bar(B)+bar(C ))`C. `Y=barA.(B+bar(C ))`D. `Y=barA.(B+C )` |
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Answer» Correct Answer - D |
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| 20. |
Write the truth table for the circuit given in Fig., consisting of NOR gates only. Identify the logic operations (OR, AND, NOT) performed by two circuits. A. NOTB. ANDC. ORD. None of these |
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Answer» Correct Answer - A |
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| 21. |
The truth table for the circuit shown in the figure is A. `|{:(A,B,Y),(1,1,1),(0,1,0),(1,0,0),(0,0,1):}|`B. `|{:(A,B,Y),(1,1,0),(0,0,1),(1,0,0),(0,1,1):}|`C. `|{:(A,B,Y),(1,1,0),(0,1,0),(1,0,0),(0,0,0):}|`D. `|{:(A,B,Y),(1,1,1),(0,1,1),(1,0,1),(0,0,1):}|` |
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Answer» Correct Answer - D |
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| 22. |
Give Boolean expression and Truth table for NOR gate.A. `C = A + B`B. `C = bar(A+B)`C. `C = A.B`D. `C = bar(A.B)` |
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Answer» Correct Answer - B |
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| 23. |
The adjoining diagram shows the biasing of an npn-transistor in common emitter configuration used in an amplifer. The design of the transistor is such that `98%` of the charge carries passing through the emitter reach the collector. If base current changes from `50 muA` to `100muA`, then the corresponding change in the voltage across the load resistance `R_(L)` will be A. 0.25 VB. 0.5 VC. 24.5 VD. 49.0 V |
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Answer» Correct Answer - C |
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| 24. |
The transfer ration of a transistor is `50`. The input resistance of the transistor when used in the common -emitter configuration is `1 kOmega`. The peak value for an `A.C.` input voltage of `0.01 V` peak isA. `100 muA`B. `0.01 muA`C. `0.25 muA`D. `500 muA` |
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Answer» Correct Answer - D |
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| 25. |
A transistor has three impurity regions , emitter , base and collector. Arrange them in order of increasing doping levels.A. emitter, base and collectorB. collector, base and emitterC. base, emitter and collectorD. base, collector and emitter |
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Answer» Correct Answer - D |
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| 26. |
Consider an n-p-n transistor with its base - emitter junction forward biased and collector base junction reverse biased . Which of the following statements are true?A. Electrons crossover from emittor statements are true?B. Holes move from base to collectorC. Electrons move from emittor to baseD. Electrons from emitter move out of base without going to the collector |
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Answer» Correct Answer - A::C |
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