1.

A potential difference of 2V is applied between the opposite faces of a Ge crystal of area1 cm^2 and thickness 0.5 mm . If the concentration of electrons in Ge is 2xx10^(19)//m^3 and mobilities of electrons and holes are 0.36(m^2)/("volt"-s) and 0.14(m^2)/("volt"-s)respectively , then the current flowing through the plate will be

Answer»

0.25 A
0.45 A
0.56 A
0.64 A

Solution :`sigma = "NE"=(mu_e+mu_h)=2xx10^(19)xx1.6xx10^(-19)`
`(0.36+0.14)`
`=1.6(Omega -m)^(-1)`
`R=rho (l)/A=l/(sigmaA)=(0.5xx10^(-3))/(1.6xx10^(-4))=25/8Omega`
`:. i=V/R=2/(25//8)=16/25A=0.64A`.


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