A silicon PN junction diode under revers bias has depletion width of 10µm, relative permittivity is 11.7 and permittivity, ε0 =8.85×10^-12F/m. Then depletion capacitance /m^2 =?(a) 0.1µF/m^2(b) 1.7µF/m^2(c) 10µF/m^2(d) 0.5µF/m^2This question was addressed to me in an interview.The query is from Diode Capacitances topic in section Semiconductor-Diode Characteristics of Electronic Devices & Circuits

A silicon PN junction diode under revers bias has depletion width of 1

1.	A silicon PN junction diode under revers bias has depletion width of 10µm, relative permittivity is 11.7 and permittivity, ε0 =8.85×10^-12F/m. Then depletion capacitance /m^2 =?(a) 0.1µF/m^2(b) 1.7µF/m^2(c) 10µF/m^2(d) 0.5µF/m^2This question was addressed to me in an interview.The query is from Diode Capacitances topic in section Semiconductor-Diode Characteristics of Electronic Devices & Circuits
Answer» The correct OPTION is (C) 10µF/m^2 Explanation: We know, CT =Aε0εr /W CT/A= (8.85×10^-12)(11.7)/10 =10 By PUTTING the VALUES we get 10µF/m^2.

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