At temperature 300 K number density of electrons and holes in pure silicon is 1.5xx10^(16)m^(-3). The number density of hole increase by 4.5xx10^(22)m^(-3) dopping the indium impurity so calculate number denstiyof electron.

At temperature 300 K number density of electrons and holes in pure sil

1.	At temperature 300 K number density of electrons and holes in pure silicon is 1.5xx10^(16)m^(-3). The number density of hole increase by 4.5xx10^(22)m^(-3) dopping the indium impurity so calculate number denstiyof electron.
Answer» SOLUTION :`n_(E )=5XX10^(9)m^(-3)`

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At temperature 300 K number density of electrons and holes in pure silicon is 1.5xx10^(16)m^(-3). The number density of hole increase by 4.5xx10^(22)m^(-3) dopping the indium impurity so calculate number denstiyof electron.

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