1.

Briefly explain its working. Draw its V-I characteristics for two different intensities of illumination.

Answer»

Solution :(i) Working : When reverse biased photo DIODE is illuminated with light of energy greater than the FORBIDDEN energy gap (`E_g`), electron hole pair are generated in, or near, the depletion region. DUE to junction field, electrons are COLLECTED on the n-side and holes on p-side, giving rise to a potential difference. (ii)


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