`C` and `Si` both have same lattice structure, having `4` bonding electrons in each. However, `C` is insulator whereas `Si` is intrinsic semiconductor. This is becauseA. The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the thirdB. The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit.C. In case of C the valence band is not completely filled at absolute zero temperatureD. In case of C the conduction bans is partly filled even at absolute zero temperature

`C` and `Si` both have same lattice structure, having `4` bonding elec

1.	`C` and `Si` both have same lattice structure, having `4` bonding electrons in each. However, `C` is insulator whereas `Si` is intrinsic semiconductor. This is becauseA. The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the thirdB. The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit.C. In case of C the valence band is not completely filled at absolute zero temperatureD. In case of C the conduction bans is partly filled even at absolute zero temperature
Answer» Correct Answer - A The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third.

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