Consider a CE circuit, where trans-conductance is 50mΩ^-1, diffusion capacitance is 100 pF, transition capacitance is 3 pF. IB = 20μA. Given base emitter dynamic resistance, rbe = 1000 Ω, inputVIis 20*sin(10^7t). What is the short circuit current gain?(a) 30(b) 35(c) 40(d) 100I got this question in an international level competition.The above asked question is from High Frequency Response topic in portion Transistor Frequency Response of Analog Circuits

Consider a CE circuit, where trans-conductance is 50mΩ^-1, diffusion

1.	Consider a CE circuit, where trans-conductance is 50mΩ^-1, diffusion capacitance is 100 pF, transition capacitance is 3 pF. IB = 20μA. Given base emitter dynamic resistance, rbe = 1000 Ω, inputVIis 20*sin(10^7t). What is the short circuit current gain?(a) 30(b) 35(c) 40(d) 100I got this question in an international level competition.The above asked question is from High Frequency Response topic in portion Transistor Frequency Response of Analog Circuits
Answer» Correct ANSWER is (b) 35 Best explanation: AI = IL/IB IL = -gmVb’e Vb’e = Ib rb’e/(1+jωCrb’e) C = CD + CT = 103pF Vb’e = 20μ.1k/(1+j.10^7.103.10^-12.1000) AI = IL/IB = 50m.1k/(1+j.10^7.103.10^-12.1000) AI = 35 (approx).

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