40 + Interview Questions in BJT Biasing in Analog Circuits Page 1 InterviewSolution

1.	For a BJT, for common base configuration the input characteristics are represented by a plot between which of the following parameters?(a) VBE and IE(b) VBE and IB(c) VCE and IC(d) VCC and ICThe question was asked by my school principal while I was bunking the class.The query is from BJT Configuration in chapter BJT Biasing of Analog Circuits
Answer» Right CHOICE is (a) VBE and IE To explain: The input signal is APPLIED between the base and the emitter TERMINALS. Input current flowing is the base current and HENCE characteristics are REPRESENTED by a plot between VBE and IB.

Discussion

2.	For a BJT, for common base configuration the output characteristics are represented by a plot between which of the following parameters?(a) VBE and IB(b) VCE and IC(c) VCB and IC(d) VCE and IBI had been asked this question in homework.Question is taken from BJT Configuration topic in chapter BJT Biasing of Analog Circuits
Answer» The CORRECT answer is (c) VCB and IC For explanation: The INPUT signal is APPLIED between the collector and the emitter terminals. Input current flowing is the collector current and hence CHARACTERISTICS are represented by a plot between VCE and IC.

Discussion

3.	In a BJT, if the collector-base junction is reverse-biased and the base-emitter junction is forward-biased, which region is the BJT operating in?(a) Saturation region(b) Active region(c) Cutoff region(d) Reverse active regionThis question was addressed to me in an interview for internship.I'm obligated to ask this question of BJT Configuration in chapter BJT Biasing of Analog Circuits
Answer» Right CHOICE is (b) ACTIVE region To explain I would say: If the collector-base JUNCTION is reverse-biased and the base-emitter junction is forward-biased, then the BJT functions in the active region of the output characteristics.

Discussion

4.	In a BJT, if the collector-base junction is forward-biased and the base-emitter junction is forward-biased, which region is the BJT operating in?(a) Saturation region(b) Active region(c) Cutoff region(d) Reverse active regionThe question was asked during an online interview.This key question is from BJT Configuration in division BJT Biasing of Analog Circuits
Answer» The CORRECT choice is (a) Saturation REGION To elaborate: If the collector-base junction and the base-emitter junction are both forward-biased, then the BJT functions in the saturation region of the output characteristics.

Discussion

5.	In a BJT, if the collector-base junction and the base-emitter junction are both reverse-biased, which region is the BJT operating in?(a) Saturation region(b) Active region(c) Cutoff region(d) Reverse active regionThis question was posed to me in a national level competition.My enquiry is from BJT Configuration in chapter BJT Biasing of Analog Circuits
Answer» CORRECT option is (C) Cutoff region To explain I would say: If the collector-base junction and the base-emitter junction are both reverse-biased, then the BJT functions in the cutoff region of the output CHARACTERISTICS.

Discussion

6.	From the given characteristics, what is the approximate value of IC at IB=30 uA and VCE=10 V?(a) 3 mA(b) 3.4 mA(c) 0 mA(d) 2 mAThe question was asked in semester exam.I'd like to ask this question from BJT Configuration topic in section BJT Biasing of Analog Circuits
Answer» RIGHT OPTION is (b) 3.4 mA The explanation is: At the INTERSECTION of IB=30 UA and VCE=10 V, IC=3.4 mA.

Discussion

7.	Which of the following correctly determines the relation between α and β?(a) β=α/(1-α)(b) α=β/(1-α)(c) β=α/(1-β)(d) β=α*(1-β)I had been asked this question during an interview for a job.I want to ask this question from BJT Configuration topic in section BJT Biasing of Analog Circuits
Answer» The correct OPTION is (a) β=α/(1-α) For explanation I WOULD SAY: α and β are related as β=α/(1-α). In a BJT, β = IC/IB. and α = IC/IE β = αIE/IB = (1+β)α β = α + αβ β = α/1-α.

Discussion

8.	From the given characteristics, what is the approximate value of IC at VBE=0.7 V and VCE=15 V?(a) 3.4 mA(b) 0 mA(c) 2.5 mA(d) 10 mAThe question was asked in an interview for internship.Asked question is from BJT Configuration in chapter BJT Biasing of Analog Circuits
Answer» Correct OPTION is (C) 2.5 mA To elaborate: From the CHARACTERISTICS, the value of IB at VBE=0.7V is 20uA. Now, from IB=20 UA, we get IC = 2.5 mA.

Discussion

9.	The value of IC isprecisely zero when the value of IE is zero.(a) True(b) FalseI have been asked this question by my school principal while I was bunking the class.I'd like to ask this question from BJT Configuration topic in chapter BJT Biasing of Analog Circuits
Answer» The correct answer is (b) False The best EXPLANATION: When the value of IE is zero, then the value of IC is EQUAL to ICBOwhich is in the order of microamperes but not zero.

Discussion

10.	For common emitter configuration, which of the following is the correct relation?(a) IC < IE(b) IC = βIB(c) IC = αIE(d) IC = IEI had been asked this question in an interview.My question is based upon BJT Configuration in chapter BJT Biasing of Analog Circuits
Answer» The CORRECT ANSWER is (d) IC = IE For explanation I would say: All the relations hold true i.e. IC = βIB and IC = αIE. Asα<1, HENCE IC < IE.

Discussion

11.	Which of the following is not a valid type of BJT?(a) PNP(b) NPN(c) PPN(d) NNPThis question was addressed to me during an interview.I'd like to ask this question from BJT Construction and Operation in section BJT Biasing of Analog Circuits
Answer» The correct choice is (C) PPN Easy explanation: A BJT is a DEVICE with a layer of semiconductor sandwiched between 2 unlike types of semiconductors and hence, PPN is not a VALID type of a BJT.

Discussion

12.	In a BJT, the outer layers are much more thick as compared to the middle layer.(a) True(b) FalseThis question was posed to me in an interview.Question is from BJT Construction and Operation in chapter BJT Biasing of Analog Circuits
Answer» CORRECT answer is (a) True Best explanation: In a BJT, the THICKNESS of the middle LAYER or the base is thin as COMPARED to the COLLECTOR and emitter.

Discussion

13.	Considering the resistances of emitter, collector and base to be Re, Rc and Rb respectively, which of the following is the correct statements?(a) Re > Rb > Rc(b) Rc > Rb > Re(c) Rb > Rc > Re(d) Rb = Rc > ReThis question was addressed to me during an online interview.Asked question is from BJT Construction and Operation in division BJT Biasing of Analog Circuits
Answer» Right choice is (C) RB > Rc > Re The explanation is: As the BASE is LIGHTLY doped, the number of free charge carriers are less and hence the resistance is high and as the emitter is the most HIGHLY doped, its resistance is low.

Discussion

14.	In a BJT, which of the following layers is heavily doped?(a) Collector(b) Emitter(c) Base(d) ElectronThe question was asked in an interview.My query is from BJT Construction and Operation topic in division BJT Biasing of Analog Circuits
Answer» Right answer is (b) Emitter The best I can explain: The emitter is the most heavily doped and contains the maximum AMOUNT of CHARGE carriers. It is the emitter’s TASK to inject carriers into the base. These bases are thin and LIGHTLY doped. For npn B JT, emitter injects electrons, and for pnp, it injects HOLES.

Discussion

15.	In a pnp-BJT, when the E-B junction is forward biased and no voltage is applied across C-B junction, what happens to the width of the depletion region in the E-B junction?(a) Increases(b) Decreases(c) Remains same(d) Can’t be determinedThe question was asked during an interview for a job.The origin of the question is BJT Construction and Operation in portion BJT Biasing of Analog Circuits
Answer» Right option is (b) Decreases To elaborate: On application of a FORWARD BIAS voltage ACROSS E-B junction, the WIDTH of the DEPLETION region decreases.

Discussion

16.	Which of the following statements is true about proper functioning of a BJT?(a) One junction is forward biased and one is reverse biased(b) Both junctions are forward biased(c) Both junctions are reverse biased(d) Can’t be determinedThe question was posed to me during an interview.My question is based upon BJT Construction and Operation topic in section BJT Biasing of Analog Circuits
Answer» The CORRECT option is (a) One junction is forward biased and one is REVERSE biased Easiest explanation: In a BJT, depending UPON the biasing of the two JUNCTIONS, the BJT behaves differently. The BJT may be in saturation, WHEREIN it acts like a short circuit, or it may be in cut-off, i.e an open circuit. The BJT can be either in forward active or reverse active mode. Active mode is the common mode, used in BJTs and obtained by one forward biased and one reverse biased junction.

Discussion

17.	What is the typical order of magnitude of the base current for a BJT?(a) 10 ^-8(b) 10 ^-9(c) 10 ^-6(d) 10 ^-3I had been asked this question in an interview.The origin of the question is BJT Construction and Operation in section BJT Biasing of Analog Circuits
Answer» Right choice is (c) 10 ^-6 Easiest explanation: As the BASE current is quite LOWER as compared to the collector and emitter current, it is usually in the ORDER of MICROAMPERES.

Discussion

18.	The collector current in a BJT is temparature-independent.(a) True(b) FalseI got this question by my school principal while I was bunking the class.Query is from BJT Construction and Operation in division BJT Biasing of Analog Circuits
Answer» RIGHT OPTION is (a) True Explanation: The collector current I C in a BJT is made up of TWO components – one due to majority carriers and the other due to minority carriers. The COMPONENT of IC due to minority carriers i.e ICO is temparature SENSITIVE.

Discussion

19.	Which of the following currents in a BJT is also called leakage current?(a) IC(b) IE(c) ICO(d) ICBOThe question was asked in an interview.The question is from BJT Construction and Operation in chapter BJT Biasing of Analog Circuits
Answer» The correct choice is (a) IC Best explanation: LEAKAGE current in BJT is represented by ICO, which is due to the flow of minority carriers in the TRANSISTOR. It consists of ICBO and ICEO. ICO depends on TEMPERATURE, doubling with 10° RISE in temperature. It thus effects total COLLECTOR current, IC, and hence affects the power dissipation.

Discussion

20.	Which of the following relations are correct?(a) IE + IB = IC(b) IC + IB = IE(c) IE + IC = IB(d) IB + IE = IBI have been asked this question during an interview.Question is from BJT Construction and Operation in chapter BJT Biasing of Analog Circuits
Answer» Right answer is (b) IC + IB = IE The BEST I can explain: On APPLYING KCL to the BJT, we GET IC + IB = IE.

Discussion

21.	For a BJT, what is typically the shape of the power dissipation curve, if it’s plotted on the output characteristics?(a) Parabola(b) Linear(c) Hyperbola(d) CircularThis question was posed to me in an interview for job.Enquiry is from Limits of Operation in division BJT Biasing of Analog Circuits
Answer» Right choice is (c) HYPERBOLA To explain I would say: Power Dissipation in a BJT is given by P=VCE.IC. This is in the form of k=xy which is the equation of a hyperbola.

Discussion

22.	What is the region on the output characteristics below IC = ICEO line called?(a) Active region(b) Cutoff region(c) Saturation region(d) Active & Saturation regionI got this question during an interview.This question is from Limits of Operation in chapter BJT Biasing of Analog Circuits
Answer» The CORRECT ANSWER is (b) Cutoff REGION The explanation is: The region below IC = ICEO is CALLED the cutoff region.

Discussion

23.	What is the region on the output characteristics for VCE < VCEsat called?(a) Active region(b) Cutoff region(c) Saturation region(d) Active & Cutoff regionI had been asked this question in quiz.This interesting question is from Limits of Operation topic in division BJT Biasing of Analog Circuits
Answer» RIGHT option is (c) Saturation region The BEST explanation: The region below VCE < VCESAT is called the saturation region.

Discussion

24.	Given that the collector power dissipation is 300 mW, what is the value of collector to emitter voltage for collector current = 50 mA?(a) 6 V(b) 3 V(c) 0 V(d) 2 vThis question was posed to me in an online quiz.This interesting question is from Limits of Operation in portion BJT Biasing of Analog Circuits
Answer» Correct OPTION is (a) 6 V Easiest explanation: P = VCE.IC = > 300mW = VCE(50 mA) = > VCE = 300/50 = 6 V.

Discussion

25.	From the given characteristics, the value of VCEsat is closest to which of the following values?(a) 0.3 V(b) 1 V(c) 5 V(d) 20VI have been asked this question in semester exam.My doubt stems from Limits of Operation topic in section BJT Biasing of Analog Circuits
Answer» Correct option is (a) 0.3 V Best EXPLANATION: From the given characteristics, the SATURATION voltage is obtained through the VCE vs IC graph where in the approximate saturation region is the area where the dotted vertical line near to the origin is PRESENT. Hence we can ESTIMATE the value of VSat to be that of 0.3V.

Discussion

26.	From the given curve tracer response, what is the value of β for IC = 7 mA and VCE = 5 V?(a) 150(b) 180(c) 250(d) 120I have been asked this question by my school principal while I was bunking the class.My question is from Limits of Operation in division BJT Biasing of Analog Circuits
Answer» Correct choice is (b) 180 The explanation: From the CURVE, we get change in IC = (8.2-6.4) mA and change in IB = 10 uA. HENCE, IC/beta; = (1.8/0.01) = 180.

Discussion

27.	Given that the collector power dissipation is 300 mW, what is the value of collector current for the collector to emitter voltage = 12 V?(a) 50 mA(b) 0 mA(c) 25 mA(d) 100 mAThe question was asked in quiz.The question is from Limits of Operation topic in division BJT Biasing of Analog Circuits
Answer» Right choice is (B) 0 mA Explanation: P = VCE.IC = > 300mW = (12V)IC = > IC=300/12 mA = 25 mA.

Discussion

28.	If the positive lead of a DMM, with the mode set to ohmmeter is connected to the base and the negative lead to the emitter and a low resistance reading is obtained, then what is the type of transistor that is being tested?(a) NPN(b) PNP(c) Faulty transistor(d) Not a transistor, it is a FETThis question was posed to me in an interview for internship.My doubt stems from Limits of Operation in portion BJT Biasing of Analog Circuits
Answer» Right option is (a) NPN The EXPLANATION: There are MULTIPLE ways to TEST the BJT to be npn or pnp using a DMM based upon which terminals are connected to which lead of the DMM. If positive is to base and negative to the EMITTER of the BJT, and if a low READING is obtained and not a over limit, then the transistor is NPN.

Discussion

29.	If the positive lead of a DMM, with the mode set to ohmmeter is connected to the base and the negative lead to the emitter and a high resistance reading is obtained, then what is the type of transistor that is being tested?(a) npn(b) pnp(c) faulty(d) not a transistor, it is a FETI had been asked this question during an interview for a job.This interesting question is from Limits of Operation in chapter BJT Biasing of Analog Circuits
Answer» Correct answer is (a) NPN To EXPLAIN I would say: If the POSITIVE lead of a DMM, with the mode set to ohmmeter is connected to the base and the negative lead to the emitter and a low resistance READING is obtained, then what is the type of transistor that is being TESTED is npn.

Discussion

30.	For the given transistor, what is the correct sequence of the pins from left to right?(a) ECB(b) BCE(c) CEB(d) CBEThe question was posed to me in class test.My question is based upon Limits of Operation in division BJT Biasing of Analog Circuits
Answer» Right ANSWER is (d) CBE Best explanation: With the curved SIDE facing us, the answer can EITHER be collector-base-emistter, left to right, or emitter-base-collector. Hence the correct OPTION is CBE, and that applies for an NPN transistor.

Discussion

31.	For best operation of a BJT, which region must the operating point be set at?(a) Active region(b) Cutoff region(c) Saturation region(d) Reverse active regionThis question was addressed to me during an interview for a job.I'd like to ask this question from BJT DC biasing topic in chapter BJT Biasing of Analog Circuits
Answer» Correct answer is (a) Active region The explanation: OPERATING point for a BJT MUST always be SET in the active region to ensure proper functioning. Setting up of Q-point in any other region may LEAD to reduced functionality.

Discussion

32.	Which of the following is the correct relationship between base and emitter current of a BJT?(a) IB = β IE(b) IB = IE(c) IB = (β + 1) IE(d) IE = (β + 1) IBI got this question in final exam.Question is taken from BJT DC biasing in section BJT Biasing of Analog Circuits
Answer» The CORRECT ANSWER is (d) IE = (β + 1) IB To ELABORATE: For a BJT, the COLLECTOR current IC = βIB and IE = IC + IB Hence, IE = (β + 1) IB.

Discussion

33.	From the given circuit, using a silicon transistor, what is the value of IBQ?(a) 47.08 mA(b) 47.08 uA(c) 50 uA(d) 0 mAI have been asked this question in examination.Question is taken from BJT DC biasing in division BJT Biasing of Analog Circuits
Answer» Correct choice is (B) 47.08 uA The BEST I can explain: Consider the BJT to be in saturation. Then IC=12-0.2/2.2k=5.36 mA And IB=12-0.8/240k=0.047 mA IBMIN=ICSAT/β=5.09/50=0.1072mA which is GREATER than above IB. Hence TRANSISTOR is in the active region. Thus IC=βIB. VBE=0.7V IB=12-0.7/240=47.08μA

Discussion

34.	From the given circuit, using a silicon BJT, what is the value of VCEQ?(a) 7 V(b) 0.7 V(c) 6.83 V(d) 7.17 VThis question was addressed to me during an online exam.Origin of the question is BJT DC biasing topic in division BJT Biasing of Analog Circuits
Answer» The CORRECT choice is (C) 6.83 V To explain I would say: Consider the BJT to be in SATURATION. Then IC=12-0.2/2.2k=5.36 mA And IB=12-0.8/240k=0.047 mA IBMIN=ICSAT/β=5.09/50=0.1072mA which is GREATER than above IB. Hence TRANSISTOR is in the active region. Thus IC=βIB. VBE=0.7V IB=12-0.7/240=47.08μA IC=50×47.08=2.354 mA VCE=VCC-ICRC=12-2.354*2.2=12-5.178=6.83V.

Discussion

35.	From the given circuit, using a silicon BJT, what is the value of VBC?(a) 6.13 V(b) -6.13 V(c) 7 V(d) -7 VThis question was addressed to me in an internship interview.My question comes from BJT DC biasing topic in section BJT Biasing of Analog Circuits
Answer» RIGHT answer is (b) -6.13 V For explanation I WOULD say: Consider the BJT to be in SATURATION. Then IC=12-0.2/2.2k=5.36 mA And IB=12-0.8/240k=0.047 mA IBMIN=ICSAT/β=5.09/50=0.1072mA which is greater than above IB. Hence TRANSISTOR is in the active region. Thus IC=βIB. VBE=0.7V IB=12-0.7/240=47.08μA IC=50×47.08=2.354 mA VCE=VCC-ICRC=12-2.354*2.2=12-5.178=6.83V Hence VBC = 0.7-6.83 = -6.13V.

Discussion

36.	From the given circuit, using silicon BJT, what is the value of the saturation collector current?(a) 5 mA(b) 5.36 mA(c) 5.45 mA(d) 10.9 mAI got this question in an international level competition.Origin of the question is BJT DC biasing topic in chapter BJT Biasing of Analog Circuits
Answer» Correct answer is (B) 5.36 mA To explain: To obtain an approximate answer, under saturation the BJT is ON and hence acts as a short CIRCUIT. HOWEVER, ideally a drop exists for the transistor which is a fixed value. For an exact answer, if the BJT is a Silicon transistor, then drop VCE = 0.2V and current is 12-0.2/2.2=5.36 mA.

Discussion

37.	In the given circuit, what is the value of IC if the BJT is made of Silicon?(a) 2.01 mA(b) 2.01 uA(c) 10.05 mA(d) 10.05 uAI got this question in an internship interview.The doubt is from BJT DC biasing in division BJT Biasing of Analog Circuits
Answer» The CORRECT ANSWER is (a) 2.01 mA To EXPLAIN: Consider the BJT to be in SATURATION. Then IC=20-0.2/2k=9.9 mA And IB=20-0.8/430k=0.044 mA IBMIN=ICSAT/β=5.09/50=0.198mA which is greater than above IB. Hence transistor is in the ACTIVE region. Thus IC=βIB. VBE=0.7V IB=20-0.7/430=44.88μA IC=50×44.88=2.24 mA.

Discussion

38.	In the given circuit, using a silicon BJT, what is the value of VCE?(a) 20 V(b) 15.52 V(c) 14.98 V(d) 13.97 VThe question was posed to me in a national level competition.My enquiry is from BJT DC biasing topic in portion BJT Biasing of Analog Circuits
Answer» Correct answer is (b) 15.52 V The EXPLANATION is: Consider the BJT to be in saturation. Then IC=20-0.2/2k=9.9 mA And IB=20-0.8/430k=0.044 mA IBMIN=ICSAT/β=5.09/50=0.198mA which is greater than above IB. Hence TRANSISTOR is in the ACTIVE region. Thus IC=βIB. VBE=0.7V IB=20-0.7/430=44.88μA IC=50×44.88=2.24 mA VCE=20-2.24*2=15.52V.

Discussion

39.	In the given circuit, what is the value of VE when using a silicon BJT?(a) 2.01 V(b) 0.28 V(c) 0 V(d) 2.28 VThe question was posed to me by my college professor while I was bunking the class.The question is from BJT DC biasing topic in portion BJT Biasing of Analog Circuits
Answer» The correct option is (d) 2.28 V For EXPLANATION: Consider the BJT to be in SATURATION. Then IC=20-0.2/2k=9.9 mA And IB=20-0.8/430k=0.044 mA IBMIN=ICSAT/β=5.09/50=0.198mA which is GREATER than above IB. Hence transistor is in the active region. Thus IC=βIB. VBE=0.7V IB=20-0.7/430=44.88μA IC=50×44.88=2.24 mA VCE=20-2.242=15.52V VE=IERE=(1+β)IBRE=5144.88*1=2.28V.

Discussion

40.	In the given circuit using a silicon BJT, what is the value of saturation collector current?(a) 10 mA(b) 8.77 mA(c) 6.67 mA(d) 5 mAI got this question during an online interview.Query is from BJT DC biasing in section BJT Biasing of Analog Circuits
Answer» CORRECT answer is (c) 6.67 mA The best explanation: To obtain an APPROXIMATE answer, under saturation the BJT is ON and hence acts as a short CIRCUIT. However, ideally a drop exists for the transistor which is a fixed value. For an EXACT answer, if the BJT is a Silicon transistor, then drop VCE = 0.2V and current is 20-0.2/2.2=9.9 mA.

Discussion

Explore topic-wise InterviewSolutions in .

From the given characteristics, what is the approximate value of IC at IB=30 uA and VCE=10 V?(a) 3 mA(b) 3.4 mA(c) 0 mA(d) 2 mAThe question was asked in semester exam.I'd like to ask this question from BJT Configuration topic in section BJT Biasing of Analog Circuits

Which of the following correctly determines the relation between α and β?(a) β=α/(1-α)(b) α=β/(1-α)(c) β=α/(1-β)(d) β=α*(1-β)I had been asked this question during an interview for a job.I want to ask this question from BJT Configuration topic in section BJT Biasing of Analog Circuits

From the given characteristics, what is the approximate value of IC at VBE=0.7 V and VCE=15 V?(a) 3.4 mA(b) 0 mA(c) 2.5 mA(d) 10 mAThe question was asked in an interview for internship.Asked question is from BJT Configuration in chapter BJT Biasing of Analog Circuits

The value of IC isprecisely zero when the value of IE is zero.(a) True(b) FalseI have been asked this question by my school principal while I was bunking the class.I'd like to ask this question from BJT Configuration topic in chapter BJT Biasing of Analog Circuits

For common emitter configuration, which of the following is the correct relation?(a) IC < IE(b) IC = βIB(c) IC = αIE(d) IC = IEI had been asked this question in an interview.My question is based upon BJT Configuration in chapter BJT Biasing of Analog Circuits

Which of the following is not a valid type of BJT?(a) PNP(b) NPN(c) PPN(d) NNPThis question was addressed to me during an interview.I'd like to ask this question from BJT Construction and Operation in section BJT Biasing of Analog Circuits

In a BJT, the outer layers are much more thick as compared to the middle layer.(a) True(b) FalseThis question was posed to me in an interview.Question is from BJT Construction and Operation in chapter BJT Biasing of Analog Circuits

In a BJT, which of the following layers is heavily doped?(a) Collector(b) Emitter(c) Base(d) ElectronThe question was asked in an interview.My query is from BJT Construction and Operation topic in division BJT Biasing of Analog Circuits

What is the typical order of magnitude of the base current for a BJT?(a) 10 ^-8(b) 10 ^-9(c) 10 ^-6(d) 10 ^-3I had been asked this question in an interview.The origin of the question is BJT Construction and Operation in section BJT Biasing of Analog Circuits

The collector current in a BJT is temparature-independent.(a) True(b) FalseI got this question by my school principal while I was bunking the class.Query is from BJT Construction and Operation in division BJT Biasing of Analog Circuits

Which of the following currents in a BJT is also called leakage current?(a) IC(b) IE(c) ICO(d) ICBOThe question was asked in an interview.The question is from BJT Construction and Operation in chapter BJT Biasing of Analog Circuits

Which of the following relations are correct?(a) IE + IB = IC(b) IC + IB = IE(c) IE + IC = IB(d) IB + IE = IBI have been asked this question during an interview.Question is from BJT Construction and Operation in chapter BJT Biasing of Analog Circuits

For a BJT, what is typically the shape of the power dissipation curve, if it’s plotted on the output characteristics?(a) Parabola(b) Linear(c) Hyperbola(d) CircularThis question was posed to me in an interview for job.Enquiry is from Limits of Operation in division BJT Biasing of Analog Circuits

What is the region on the output characteristics below IC = ICEO line called?(a) Active region(b) Cutoff region(c) Saturation region(d) Active & Saturation regionI got this question during an interview.This question is from Limits of Operation in chapter BJT Biasing of Analog Circuits

What is the region on the output characteristics for VCE < VCEsat called?(a) Active region(b) Cutoff region(c) Saturation region(d) Active & Cutoff regionI had been asked this question in quiz.This interesting question is from Limits of Operation topic in division BJT Biasing of Analog Circuits

From the given characteristics, the value of VCEsat is closest to which of the following values?(a) 0.3 V(b) 1 V(c) 5 V(d) 20VI have been asked this question in semester exam.My doubt stems from Limits of Operation topic in section BJT Biasing of Analog Circuits

From the given curve tracer response, what is the value of β for IC = 7 mA and VCE = 5 V?(a) 150(b) 180(c) 250(d) 120I have been asked this question by my school principal while I was bunking the class.My question is from Limits of Operation in division BJT Biasing of Analog Circuits

Given that the collector power dissipation is 300 mW, what is the value of collector current for the collector to emitter voltage = 12 V?(a) 50 mA(b) 0 mA(c) 25 mA(d) 100 mAThe question was asked in quiz.The question is from Limits of Operation topic in division BJT Biasing of Analog Circuits

For the given transistor, what is the correct sequence of the pins from left to right?(a) ECB(b) BCE(c) CEB(d) CBEThe question was posed to me in class test.My question is based upon Limits of Operation in division BJT Biasing of Analog Circuits

Which of the following is the correct relationship between base and emitter current of a BJT?(a) IB = β IE(b) IB = IE(c) IB = (β + 1) IE(d) IE = (β + 1) IBI got this question in final exam.Question is taken from BJT DC biasing in section BJT Biasing of Analog Circuits

From the given circuit, using a silicon transistor, what is the value of IBQ?(a) 47.08 mA(b) 47.08 uA(c) 50 uA(d) 0 mAI have been asked this question in examination.Question is taken from BJT DC biasing in division BJT Biasing of Analog Circuits

From the given circuit, using a silicon BJT, what is the value of VCEQ?(a) 7 V(b) 0.7 V(c) 6.83 V(d) 7.17 VThis question was addressed to me during an online exam.Origin of the question is BJT DC biasing topic in division BJT Biasing of Analog Circuits

From the given circuit, using a silicon BJT, what is the value of VBC?(a) 6.13 V(b) -6.13 V(c) 7 V(d) -7 VThis question was addressed to me in an internship interview.My question comes from BJT DC biasing topic in section BJT Biasing of Analog Circuits

From the given circuit, using silicon BJT, what is the value of the saturation collector current?(a) 5 mA(b) 5.36 mA(c) 5.45 mA(d) 10.9 mAI got this question in an international level competition.Origin of the question is BJT DC biasing topic in chapter BJT Biasing of Analog Circuits

In the given circuit, what is the value of IC if the BJT is made of Silicon?(a) 2.01 mA(b) 2.01 uA(c) 10.05 mA(d) 10.05 uAI got this question in an internship interview.The doubt is from BJT DC biasing in division BJT Biasing of Analog Circuits

In the given circuit, using a silicon BJT, what is the value of VCE?(a) 20 V(b) 15.52 V(c) 14.98 V(d) 13.97 VThe question was posed to me in a national level competition.My enquiry is from BJT DC biasing topic in portion BJT Biasing of Analog Circuits

In the given circuit, what is the value of VE when using a silicon BJT?(a) 2.01 V(b) 0.28 V(c) 0 V(d) 2.28 VThe question was posed to me by my college professor while I was bunking the class.The question is from BJT DC biasing topic in portion BJT Biasing of Analog Circuits

In the given circuit using a silicon BJT, what is the value of saturation collector current?(a) 10 mA(b) 8.77 mA(c) 6.67 mA(d) 5 mAI got this question during an online interview.Query is from BJT DC biasing in section BJT Biasing of Analog Circuits