In the given circuit, what is the value of VE when using a silicon BJT?(a) 2.01 V(b) 0.28 V(c) 0 V(d) 2.28 VThe question was posed to me by my college professor while I was bunking the class.The question is from BJT DC biasing topic in portion BJT Biasing of Analog Circuits

In the given circuit, what is the value of VE when using a silicon BJT

1.	In the given circuit, what is the value of VE when using a silicon BJT?(a) 2.01 V(b) 0.28 V(c) 0 V(d) 2.28 VThe question was posed to me by my college professor while I was bunking the class.The question is from BJT DC biasing topic in portion BJT Biasing of Analog Circuits
Answer» The correct option is (d) 2.28 V For EXPLANATION: Consider the BJT to be in SATURATION. Then IC=20-0.2/2k=9.9 mA And IB=20-0.8/430k=0.044 mA IBMIN=ICSAT/β=5.09/50=0.198mA which is GREATER than above IB. Hence transistor is in the active region. Thus IC=βIB. VBE=0.7V IB=20-0.7/430=44.88μA IC=50×44.88=2.24 mA VCE=20-2.242=15.52V VE=IERE=(1+β)IBRE=5144.88*1=2.28V.

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