Consider a p-n junction as a capacitor, formed with p and n-materials acting as thin metal electrodes and depletion layer width acting as separation. between them. Biasing on this, assume that a n-p-n transistor is working as an amplifier in CE configuration. If C_(1) and C_(2) are the base-emitter and collector-emitter junction capacitance, then

Consider a p-n junction as a capacitor, formed with p and n-materials

1.	Consider a p-n junction as a capacitor, formed with p and n-materials acting as thin metal electrodes and depletion layer width acting as separation. between them. Biasing on this, assume that a n-p-n transistor is working as an amplifier in CE configuration. If C_(1) and C_(2) are the base-emitter and collector-emitter junction capacitance, then
Answer» `C_(1) gt C_(2)` `C_(1) lt C_(2)` `C_(1) = C_(2)` `C_(1) = C_(2) = 0` Solution :A n-p-n TRANSISTOR working as an amplifier in CE CONFIGURATION has base-emitter junction CAPACITANCE, `C_(1)` GREATER than collector-emitter junction capacitance,`C_(2)`i.e., `C_(1) > C_(2)`.

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