For a tunnel diode, when ‘p’ is probability that carrier crosses the barrier, ’e’ is energy,’w’ is width.(a) p ∝ e^(-A*e*w)(b) p ∝ 1/ e^(-A*e*w)(c) p ∝ e^(A*e*w)(d) p ∝ 1/e^(A*e*w)The question was posed to me in an interview for internship.Origin of the question is Tunnel Diodes and its Characteristics in portion Semiconductor-Diode Characteristics of Electronic Devices & Circuits

For a tunnel diode, when ‘p’ is probability that carrier crosses t

1.	For a tunnel diode, when ‘p’ is probability that carrier crosses the barrier, ’e’ is energy,’w’ is width.(a) p ∝ e^(-Aew)(b) p ∝ 1/ e^(-Aew)(c) p ∝ e^(Aew)(d) p ∝ 1/e^(Aew)The question was posed to me in an interview for internship.Origin of the question is Tunnel Diodes and its Characteristics in portion Semiconductor-Diode Characteristics of Electronic Devices & Circuits
Answer» Correct option is (a) p ∝ e^(-Aew) To elaborate: The carrier jump occurs WITHOUT any loss of energy due to small depletion layer. The probability of the carrier to jump across a barrier DEPENDS on the energy and WIDTH of the band. This variess EXPONENTIALLY for a given carrier.

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