Four photodiodes D_(1), D_(2),D_(3) and D_(4) are made of semiconductors having band gaps of 2.5 eV, 3 eV, 2 eV, 3.5 eV respectively. Which one will be able to detect light of wavelength 600 nm?

Four photodiodes D_(1), D_(2),D_(3) and D_(4) are made of semiconducto

1.	Four photodiodes D_(1), D_(2),D_(3) and D_(4) are made of semiconductors having band gaps of 2.5 eV, 3 eV, 2 eV, 3.5 eV respectively. Which one will be able to detect light of wavelength 600 nm?
Answer» `D_(4)` `D_(3)` `D_(2)` `D_(1)` is reverse BIASED and `D_(2)` is forward biased. Answer :B

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Four photodiodes D_(1), D_(2),D_(3) and D_(4) are made of semiconductors having band gaps of 2.5 eV, 3 eV, 2 eV, 3.5 eV respectively. Which one will be able to detect light of wavelength 600 nm?

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