Germanium is doped one part million with indium at room temperature. Calculate the conductivity of doped germanium. Given: concentration of Ge atoms =4.4xx10^(28)m^(-3), intrinsic carrier concentration (n_(i))=2.4xx10^(19)m^(-3), mu_(e)=0.39m^(2)V^(-1)s^(-1) and mu_(k)=0.19m^(2)V^(-1)s^(-1)

Germanium is doped one part million with indium at room temperature. C

1.	Germanium is doped one part million with indium at room temperature. Calculate the conductivity of doped germanium. Given: concentration of Ge atoms =4.4xx10^(28)m^(-3), intrinsic carrier concentration (n_(i))=2.4xx10^(19)m^(-3), mu_(e)=0.39m^(2)V^(-1)s^(-1) and mu_(k)=0.19m^(2)V^(-1)s^(-1)
Answer» ANSWER :`1.34xx10^(3)OHM^(-1)m^(-1)`

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Germanium is doped one part million with indium at room temperature. Calculate the conductivity of doped germanium. Given: concentration of Ge atoms =4.4xx10^(28)m^(-3), intrinsic carrier concentration (n_(i))=2.4xx10^(19)m^(-3), mu_(e)=0.39m^(2)V^(-1)s^(-1) and mu_(k)=0.19m^(2)V^(-1)s^(-1)

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