1.

In a p-n junction diode, the thickness of deplection layer is2 xx 10^(-6) m and barrier potential is 0.3 V. The intensity of the electric field at the junction is

Answer»

`0.6 XX 10^(-6) VM^(-1)` from N to p side
`0.6 xx 10^(-6) Vm^(-1)` from p to n side
`1.5 xx 10^(5) Vm^(-1)` from n to p side
`1.5 xx 10^(5) Vm^(-1)` from p to n side

Solution :Electric field at the junction is given by, E = Barrier voltage(V)/Width of depletion LAYER(d)` = 0.3V/(2 xx 10^(-6)) = 1.5 xx 10^(5) V//m`


Discussion

No Comment Found

Related InterviewSolutions