In a p-n junction diode the thickness of depletion layer is 2 xx 10^(-6) m and barrier potential is 0.3 V. The intensity of the electric field at the junction is :

In a p-n junction diode the thickness of depletion layer is 2 xx 10^(-

1.	In a p-n junction diode the thickness of depletion layer is 2 xx 10^(-6) m and barrier potential is 0.3 V. The intensity of the electric field at the junction is :
Answer» <P>`0.6 XX 10^(-6) Vm^(-1) ` from n to p SIDE ` 0.6 xx 10^(-6) Vm^(-1) ` from p to n side `1.5 xx 10^5Vm^(-1) ` from n to p side `1.5 xx 10^5 Vm^(-1) ` from p to n side Answer :C

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In a p-n junction diode the thickness of depletion layer is 2 xx 10^(-6) m and barrier potential is 0.3 V. The intensity of the electric field at the junction is :

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