In n-p-n transistor, in CE configuration a) the emitter is heavily doped than the collector b) emitter and collector can be interchanged c) the base region is very thin but is heavily doped d) the conventional current flows from base to emitter

In n-p-n transistor, in CE configuration a) the emitter is heavily dop

1.	In n-p-n transistor, in CE configuration a) the emitter is heavily doped than the collector b) emitter and collector can be interchanged c) the base region is very thin but is heavily doped d) the conventional current flows from base to emitter
Answer» a and B are CORRECT a and C are correct a and d are correct b and c are correct ANSWER :C

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In n-p-n transistor, in CE configuration a) the emitter is heavily doped than the collector b) emitter and collector can be interchanged c) the base region is very thin but is heavily doped d) the conventional current flows from base to emitter

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