In silicon at T = 300 K the thermal-equilibrium concentration of electron is n0 = 5 x 10^4 cc. The hole concentration is(a) 4.5 x 10^15 cc(b) 4.5 x 10^15 m^3(c) 0.3 x 10^-6 cc(d) 0.3 x 10^-6 m^3This question was posed to me during an interview.This is a very interesting question from Semiconductor Physics topic in chapter EDC Overview of Electronic Devices & Circuits

In silicon at T = 300 K the thermal-equilibrium concentration of elect

1.	In silicon at T = 300 K the thermal-equilibrium concentration of electron is n0 = 5 x 10^4 cc. The hole concentration is(a) 4.5 x 10^15 cc(b) 4.5 x 10^15 m^3(c) 0.3 x 10^-6 cc(d) 0.3 x 10^-6 m^3This question was posed to me during an interview.This is a very interesting question from Semiconductor Physics topic in chapter EDC Overview of Electronic Devices & Circuits
Answer» The CORRECT option is (a) 4.5 x 10^15 cc The best I can EXPLAIN: NI x ni = no x PO.

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