In the circuit of CE amplifier, a silicon transistor is used. The value of V_("CC")=+20V, R_(L)=3kOmega, collector voltage =5v, beta=100. Then the base resistance R_(B) should be ……xx10^(5)Omega (Take input voltage drop across Si transistor = 0.7 V)

In the circuit of CE amplifier, a silicon transistor is used. The valu

1.	In the circuit of CE amplifier, a silicon transistor is used. The value of V_("CC")=+20V, R_(L)=3kOmega, collector voltage =5v, beta=100. Then the base resistance R_(B) should be ……xx10^(5)Omega (Take input voltage drop across Si transistor = 0.7 V)
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In the circuit of CE amplifier, a silicon transistor is used. The value of V_("CC")=+20V, R_(L)=3kOmega, collector voltage =5v, beta=100. Then the base resistance R_(B) should be ……xx10^(5)Omega (Take input voltage drop across Si transistor = 0.7 V)

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