Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentrations of 1.5xx10^(16)m^(-3) doping by indium increases n_(h) to 4.5xx10^(22)m^(-3). Caculate n_(e) in the doped Si-

Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentra

1.	Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentrations of 1.5xx10^(16)m^(-3) doping by indium increases n_(h) to 4.5xx10^(22)m^(-3). Caculate n_(e) in the doped Si-
Answer» SOLUTION :`5 xx 10^(9) m^(-3)`

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Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentrations of 1.5xx10^(16)m^(-3) doping by indium increases n_(h) to 4.5xx10^(22)m^(-3). Caculate n_(e) in the doped Si-

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