1.

The dc common emitter current gain of a n - p - ntransistor is 50 . The potential difference applied across the collector and emitter of a transistor used in CE configuration is V_(CE)= 2 V . If the collector resistance R_C = 4KOmega, the base current and the collection current (I_B) and the collector current (I_C) are

Answer»

`I_(B)=10MUA,I_(C)=0.5mA`
`I_(B)=0.5muA,I_(C)=10mA`
`I_(B)=5muA,I_(C)=1mA`
`I_(B)=1muA,I_(C)=0.5mA`

Solution :`I_(C)=(V_(CE))/R_(C)=2/(4xx10^(3))=0.5xx10^(-3)A=0.5mA`
`BETA=I_(C)/I_(B)rArrI_(B)=I_(C)/beta=(0.5xx10^(-3))/50=10^(-5)A=10muA`


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