1.

The potential barrier of the p-n junction depends …….. (i) On kind of semiconductor material (ii) On amount of doping (iii) On temperature

Answer»

Only (i) and (ii)
Only (ii)
Only (ii) and (III)
Only (i), (ii) and (iii)

Solution :Only (i), (ii) and (iii)
The potential BARRIER depend on kind of semiconductor, AMOUNT of doping and temperatureit is on all THREE.
[For `Si, V_(0)=0.7V`, For `Ge, V_(0)=0.3V]`


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